K6T0808C1D-DB70 Samsung Semiconductor, K6T0808C1D-DB70 Datasheet - Page 2

• Manufacturer Part Number: K6T0808C1D-DB70
• Manufacturer: Samsung Semiconductor

Specifications of K6T0808C1D-DB70

• Density: 256Kb
• Access Time (max): 70ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 15b
• Package Type: PDIP
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 60mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Commercial
• Mounting: Through Hole
• Pin Count: 28
• Word Size: 8b
• Number Of Words: 32K
• Lead Free Status / Rohs Status: Not Compliant

I/O1
I/O2
I/O3
VSS
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
32Kx8 bit Low Power CMOS Static RAM
FEATURES
PRODUCT FAMILY
1. The parameter is tested with 50pF test load.
PIN DESCRIPTION
K6T0808C1D Family
Pin Name
Product Family
K6T0808C1D-L
K6T0808C1D-B
K6T0808C1D-P
K6T0808C1D-F
Process Technology: TFT
Organization: 32Kx8
Low Data Retention Voltage: 2V(Min)
Package Type: 28-DIP-600B, 28-SOP-450
Power Supply Voltage: 4.5~5.5V
Three state output and TTL Compatible
A
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
0
WE
CS
OE
~A
28-SOP
14
28-DIP
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Function
27
26
25
24
23
22
21
20
19
18
16
15
28
17
28-TSOP1-0813.4 F/R
Operating Temperature
VCC
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
Commercial (0~70 C)
Industrial (-40~85 C)
VCC
VCC
A11
A13
A14
A12
A12
A14
A13
A11
WE
WE
OE
OE
A9
A8
A7
A6
A5
A4
A3
A3
A4
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
14
13
12
11
10
9
8
7
6
5
4
3
2
1
Pin Name
I/O
Vcc
NC
1
Vss
Type1 - Forward
Type1 - Reverse
~I/O
28-TSOP
28-TSOP
8
Data Inputs/Outputs
Power
Ground
No connect
V
4.5 to 5.5V
Function
CC
Range
28
27
26
25
24
23
22
21
20
19
18
17
16
15
15
16
17
18
19
20
21
22
23
24
25
26
27
28
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS
A10
55
Speed
70ns
1)
/70ns
FUNCTIONAL BLOCK DIAGRAM
CS
WE
OE
GENERAL DESCRIPTION
advanced CMOS process technology. The families support
various operating temperature ranges and have various
package types for user flexibility of system design. The fami-
lies also support low data retention voltage for battery back-
up operation with low data retention current.
The K6T0808C1D families are fabricated by SAMSUNG s
(I
I/O
I/O
Standby
SB1
Power Dissipation
30 A
30 A
1
8
5 A
5 A
Control
Logic
, Max)
A13
A8
A12
A14
A4
A5
A6
A7
Clk gen.
(Icc
Operating
60mA
2,
Data
cont
Data
cont
Row
select
Max)
28-DIP-600B, 28-SOP-450
A10 A3
CMOS SRAM
28-TSOP1-0813.4 F/R
28-TSOP1-0813.4 F/R
Precharge circuit.
Memory array
256 rows
128
Column select
A0
28-SOP-450
PKG Type
I/O Circuit
A1 A2
columns
November 1997
Revision 1.01
A9
A11