E28F320J3A110 Intel, E28F320J3A110 Datasheet - Page 55

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E28F320J3A110

Manufacturer Part Number
E28F320J3A110
Description
Manufacturer
Intel
Datasheet

Specifications of E28F320J3A110

Cell Type
NOR
Density
32Mb
Access Time (max)
110ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
22/21Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
4M/2M
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Not Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
E28F320J3A110
Manufacturer:
INT
Quantity:
3 000
Part Number:
E28F320J3A110
Manufacturer:
INT
Quantity:
3 000
Part Number:
E28F320J3A110
Manufacturer:
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Quantity:
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A.5
A.6
Datasheet
Table 27. CFI Identification (Sheet 2 of 2)
Table 28. System Interface Information
Table 29. Device Geometry Definition (Sheet 1 of 2)
System Interface Information
The following device information can optimize system interface software.
Device Geometry Definition
This field provides critical details of the flash device geometry.
Offset
Offset
Offset
1Bh
1Ch
1Dh
1Eh
1Fh
2Ah
19h
20h
21h
22h
23h
24h
25h
26h
27h
28h
Length
Length
Length
2
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
0000h means no second vendor-specified algorithm exists
Secondary algorithm Extended Query Table address.
0000h means none exists
V
V
V
V
“n” such that typical single word program time-out = 2
“n” such that typical max. buffer write time-out = 2
“n” such that typical block erase time-out = 2
“n” such that typical full chip erase time-out = 2
“n” such that maximum word program time-out = 2
typical
“n” such that maximum buffer write time-out = 2
“n” such that maximum block erase time-out = 2
“n” such that maximum chip erase time-out = 2
“n” such that device size = 2
Flash device interface: x8 async x16 async x8/x16 async
“n” such that maximum number of bytes in write buffer = 2
CC
CC
PP
PP
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
[programming] supply minimum program/erase voltage
[programming] supply maximum program/erase voltage
logic supply minimum program/erase voltage
logic supply maximum program/erase voltage
28:00,29:00 28:01,29:00 28:02,29:00
Description
Description
Description
n
in number of bytes
n
ms
n
n
n
n
times typical
ms
times typical
times typical
n
n
µs
times
n
µs
n
256-Mbit J3 (x8/x16)
Add.
Add.
1C:
1D:
1A:
1B:
1E:
1F:
18:
19:
20:
21:
22:
23:
24:
25:
26:
2A:
2B:
27:
28:
29:
Code See Table
Code
Code
--0A
Hex
--00
--00
--00
Hex
--27
--36
--00
--00
--08
--08
--00
--04
--04
--04
--00
Below
--02
--00
--05
--00
256 µs
256 µs
Value
Value
2.7 V
3.6 V
0.0 V
0.0 V
2 ms
2 ms
16 s
1 s
NA
NA
x16
x8/
32
55

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