K4S641632K-UC60 Samsung Semiconductor, K4S641632K-UC60 Datasheet
K4S641632K-UC60
Specifications of K4S641632K-UC60
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K4S641632K-UC60 Summary of contents
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... K4S640832K K4S641632K 64Mb K-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS " ...
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... K4S640832K K4S641632K Revision History Revision Month Year 0.0 January 2005 0.1 March 2005 0.2 April 2005 0.3 July 2005 1.0 September 2005 1.1 February 2006 - Target spec release - Change DC current - Delete bit organization for x4 - Delete 7ns speed bin - Final spec release ...
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... RoHS compliant for Pb-free Package GENERAL DESCRIPTION The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized 2,097,152 words by 8 bits 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high perfor- mance memory system applications ...
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... K4S640832K K4S641632K Package Physical Dimension #54 #1 0.10 MAX 0.004 0. 0.028 #28 #27 22.62 MAX 0.891 22.22 ± 0.10 0.21 0.875 ± 0.004 0.008 +0.10 0.30 0.80 -0.05 +0.004 0.0315 0.012 -0.002 54Pin TSOP(II) Package Dimension Synchronous DRAM 0~8°C 0.25 TYP 0.010 +0 ...
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... K4S640832K K4S641632K FUNCTIONAL BLOCK DIAGRAM Bank Select CLK ADD LCKE LRAS LCBR CLK CKE Samsung Electronics reserves the right to change products or specification without notice. * Data Input Register Column Decoder Latency & Burst Length Programming Register LWE LCAS Timing Register CS RAS CAS ...
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... K4S640832K K4S641632K PIN CONFIGURATION (Top view) x16 V DD DQ0 V DDQ DQ1 DQ2 V SSQ DQ3 DQ4 V DDQ DQ5 DQ6 V SSQ DQ7 V DD LDQM WE CAS RAS CS BA0 BA1 A10/AP A10/ PIN FUNCTION DESCRIPTION Pin Name CLK System clock CS Chip select CKE Clock enable ...
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... K4S640832K K4S641632K ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ASOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...
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... K4S640832K K4S641632K DC CHARACTERISTICS (x8) (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active Precharge standby current in CC2 power-down mode PS CKE & CLK ≤ CC2 I N CC2 Precharge standby current in non power-down mode I NS CC2 I P CC3 Active standby current in power-down mode PS CKE & ...
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... Operating current I CC4 (Burst mode) Refresh current I CC5 Self refresh current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S641632K-T(U)C 4. K4S641632K-T(U)L 5. Unless otherwise noted, input swing IeveI is CMOS 70°C for x16 only) A Test Condition Burst length = 1 ≥ (min CKE ≤ V ...
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... K4S640832K K4S641632K AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition 3.3V 1200Ω Output 30pF 870Ω (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) ...
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... K4S640832K K4S641632K AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width CLK low pulse width Input setup time ...
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... K4S640832K K4S641632K IBIS SPECIFICATION I Characteristics (Pull-up) OH 200MHz/133MHz 200MHz/133MHz Voltage Min (V) I (mA) 3.45 - 3.30 - 3.00 -0.35 2.70 -3.75 2.50 -6.65 1.95 -13.75 1.80 -17.75 1.65 -20.55 1.50 -23.55 1.40 -26.2 1.00 -36.25 0.20 -46.5 I Characteristics (Pull-down) OL 200MHz/133MHz 200MHz/133MHz Voltage Min (V) I (mA) 3 ...
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... K4S640832K K4S641632K V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 3.02 1.6 5.06 1.8 7.35 2.0 9.83 2.2 12.48 2.4 15.30 2.6 18.31 V Clamp @ CLK, CKE, CS, DQM & ...
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... K4S640832K K4S641632K SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Exit Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge disable column address Auto precharge enable ...