CY7C09349A-6AC Cypress Semiconductor Corp, CY7C09349A-6AC Datasheet

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CY7C09349A-6AC

Manufacturer Part Number
CY7C09349A-6AC
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C09349A-6AC

Density
72Kb
Access Time (max)
6.5ns
Operating Supply Voltage (typ)
5V
Package Type
TQFP
Operating Temp Range
0C to 70C
Supply Current
450mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
100
Word Size
18b
Lead Free Status / Rohs Status
Not Compliant
Cypress Semiconductor Corporation
Document #: 38-06048 Rev. **
Features
Notes:
1.
2.
Logic Block Diagram
• True dual-ported memory cells which allow simulta-
• Two Flow-Through/Pipelined devices
• Three Modes
• Pipelined output mode on both ports allows fast
• 0.35-micron CMOS for optimum speed/power
• High-speed clock to data access 6.5
v
R/W
UB
CE
CE
LB
OE
FT/Pipe
I/O
I/O
A
CLK
ADS
CNTEN
CNTRST
neous access of the same memory location
100-MHz cycle time
(max.)
— 4K x 18 organization (CY7C09349A)
— 8K x 18 organization (CY7C09359A)
— Flow-Through
— Pipelined
— Burst
0L
See page 6 for Load Conditions.
A
L
L
0L
1L
9L
0L
0
L
–A
–A
L
L
L
–I/O
–I/O
11
11/12L
[2]
L
L
for 4K; A
L
17L
8L
0
–A
12/13
12
for 8K devices.
For the most recent information, visit the Cypress web site at www.cypress.com
9
9
0/1
0/1
1
0
1b
Counter/
Address
Register
Decode
b
0b 1a 0a
a
[1]
/7.5/9/12 ns
3901 North First Street
Control
I/O
True Dual-Ported
Synchronous Dual-Port Static RAM
RAM Array
• Low operating power
• Fully synchronous interface for easier operation
• Burst counters increment addresses internally
• Dual Chip Enables for easy depth expansion
• Upper and lower byte controls for bus matching
• Automatic power-down
• Commercial and Industrial temperature ranges
• Available in 100-pin TQFP
— Active = 200 mA (typical)
— Standby = 0.05 mA (typical)
— Shorten cycle times
— Minimize bus noise
— Supported in Flow-Through and Pipelined modes
Control
I/O
San Jose
0a
a
1a
Counter/
Register
Address
Decode
0b
b
CA 95134
1b
0/1
1
0
0/1
Revised September 19, 2001
9
9
CY7C09349A
CY7C09359A
4K/8K x 18
12/13
408-943-2600
I/O
A
I/O
0R
CNTRST
9R
FT/Pipe
CNTEN
0R
–A
[2]
–I/O
–I/O
ADS
11/12R
R/W
CLK
CE
CE
UB
OE
LB
17R
0R
1R
8R
R
R
R
R
R
R
R
R
R

Related parts for CY7C09349A-6AC

CY7C09349A-6AC Summary of contents

Page 1

... Features • True dual-ported memory cells which allow simulta- neous access of the same memory location • Two Flow-Through/Pipelined devices — organization (CY7C09349A) — organization (CY7C09359A) • Three Modes — Flow-Through — Pipelined — Burst • Pipelined output mode on both ports allows fast 100-MHz cycle time • ...

Page 2

... Functional Description The CY7C09349A and CY7C09359A are high-speed synchro- nous CMOS 4K and dual-port static RAMs. Two ports are provided, permitting independent, simultaneous access for reads and writes to any location in memory. control, address, and data lines allow for minimal set-up and hold times. In pipelined output mode, data is registered for decreased cycle time ...

Page 3

... Max. Access Time (ns) (Clock to Data, Pipelined) Typical Operating Current I (mA) CC Typical Standby Current for I (mA) SB1 (Both Ports TTL Level) Typical Standby Current for I (mA) SB3 (Both Ports CMOS Level) Note: 4. This pin is NC for CY7C09349A. Document #: 38-06048 Rev. ** 100-Pin TQFP (Top View CY7C09359A (8K x 18) ...

Page 4

... I/O –I/O for x16) of the memory array. For read operations both Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage ........................................... >2001V Latch-Up Current..................................................... >200 mA Operating Range Range Commercial [5] Industrial CY7C09349A CY7C09359A AND CE must be asserted MAX –I/O ). 8/9L 15/17L Ambient Temperature V ...

Page 5

... Com’l. 0.05 0.5 0.05 [5] Ind. Com’l. 160 200 145 [5] Ind. Description Test Conditions MHz 5.0V CC AND CE 0 CY7C09349A CY7C09359A CY7C09349A CY7C09359A -9 2.4 2.4 0.4 0.4 2.2 2.2 0.8 0.8 10 –10 10 –10 420 215 360 195 240 410 105 35 95 ...

Page 6

... Note: 7. Test Conditions pF. Document #: 38-06048 Rev 250 TH OUTPUT (b) Thévenin Equivalent (Load 1) [7] 3.0V GND = 1. Capacitance (pF) (b) Load Derating Curve CY7C09349A CY7C09359A 5V OUTPUT 1.4V TH (c) Three-State Delay (Load 2) (Used for CKLZ OLZ including scope and jig) ALL INPUT PULSES 90% 90% 10% 10 ...

Page 7

... Clock to Clock Set-up Time CCS Note: 8. Test conditions used are Load 2. Document #: 38-06048 Rev. ** CY7C09349A CY7C09359A [ Min. Max. Min. Max. Min 100 6.5 7.5 12 6 6.5 7 CY7C09349A CY7C09359A -12 Max. Min. Max. Unit 40 33 MHz 67 50 MHz Page ...

Page 8

... CD1 Q n [9, 10, 11, 12 CYC2 t CL2 A A n+1 t CD2 Q t CKLZ = following the next rising edge of the clock constantly loads the address on the rising edge of the CLK. Numbers are for reference only. IL CY7C09349A CY7C09359A n+2 n+3 t CKHZ Q Q n+1 n OHZ OLZ ...

Page 9

... CL2 CD2 HC CD2 [15, 16, 17, 18 MATCH CD1 CWDD , R/W, CNTEN, and CNTRST = for the left port, which is being written to. IH CY7C09349A CY7C09359A CD2 CKHZ CKLZ CD2 CKHZ CKLZ NO NO MATCH t CD1 VALID >maximum specified, then data is not valid CWDD CCS CKHZ A 5 ...

Page 10

... During “No operation,” data in memory at the selected address may be corrupted and should be rewritten to ensure data integrity. Document #: 38-06048 Rev. ** [12, 19, 20, 21 n+1 n CD2 CKHZ Q n READ NO OPERATION [12, 19, 20, 21 n+1 n+2 n n+2 n+3 t CD2 OHZ READ WRITE . IH CY7C09349A CY7C09359A A A n+3 n CKLZ WRITE READ A A n+4 n CKLZ CD2 READ Page CD2 Q n+3 Q n+4 ...

Page 11

... OUT OE Document #: 38-06048 Rev. ** [10, 12, 19, 20 n+1 n CD1 CKHZ NO READ OPERATION [10, 12, 19, 20 n OHZ READ CY7C09349A CY7C09359A n+2 n n+2 t CD1 Q n CKLZ DC WRITE READ A A n+3 n CD1 CKLZ DC WRITE READ A n+4 t CD1 A n+5 t CD1 n+4 Page ...

Page 12

... R/W and CNTRST = Document #: 38-06048 Rev. ** [22] t SAD t SCN t CD2 READ WITH COUNTER [22 n+1 READ WITH COUNTER . IH CY7C09349A CY7C09359A t HAD t HCN Q n+1 n+2 COUNTER HOLD READ WITH COUNTER t t SAD HAD t t SCN HCN Q n+2 READ COUNTER HOLD WITH COUNTER Q n+3 Q ...

Page 13

... The “Internal Address” is equal to the “External Address” when ADS = V Document #: 38-06048 Rev n n+1 n+1 WRITE WITH WRITE COUNTER COUNTER HOLD . IH and equals the counter output when ADS = V IL CY7C09349A CY7C09359A [23, 24 n+2 n n+2 n+3 n+4 WRITE WITH COUNTER . IH A n+4 ...

Page 14

... SD DATA IN DATA OUT COUNTER RESET Notes: 25 UB, and 26. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset. Document #: 38-06048 Rev. ** [12, 19, 25, 26 WRITE READ ADDRESS 0 ADDRESS 0 CY7C09349A CY7C09359A n READ READ ADDRESS 1 ADDRESS n Page n ...

Page 15

... CNTRST I/O Mode Reset out( out( out( Increment out(n+ CY7C09349A CY7C09359A Operation 17 [30] Deselected [30] Deselected Write IN [30] Read Outputs Disabled Operation Counter Reset to Address 0 Load Address Load into Counter Hold External Address Blocked—Counter Disabled Counter Enabled—Internal Address Generation Page ...

Page 16

... Ordering Information 4K x18 Synchronous Dual-Port SRAM Speed (ns) Ordering Code [1] 6.5 CY7C09349A-6AC 7.5 CY7C09349A-7AC 9 CY7C09349A-9AC 12 CY7C09349A-12AC 8K x18 Synchronous Dual-Port SRAM Speed (ns) Ordering Code [1] 6.5 CY7C09359A-6AC 7.5 CY7C09359A-7AC 9 CY7C09359A-9AC CY7C09359A-9AI 12 CY7C09359A-12AC Package Diagram 100-Pin Thin Plastic Quad Flat Pack (TQFP) A100 Document #: 38-06048 Rev. ** © ...

Page 17

... Document Title: CY7C09349A/CY7C09359A 4K/ Synchronous Dual-Port Static RAM Document Number: 38-06048 Issue REV. ECN NO. Date ** 110200 09/29/01 Document #: 38-06048 Rev. ** Orig. of Change Description of Change SZV Change from Spec number: 38-00834 to 38-06048 CY7C09349A CY7C09359A Page ...

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