CY7C1049B-12VC Cypress Semiconductor Corp, CY7C1049B-12VC Datasheet

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CY7C1049B-12VC

Manufacturer Part Number
CY7C1049B-12VC
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1049B-12VC

Density
4Mb
Access Time (max)
12ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
19b
Package Type
SOJ
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
240mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
36
Word Size
8b
Number Of Words
512K
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1049B-12VCT
Manufacturer:
WINBOND
Quantity:
14
Cypress Semiconductor Corporation
Document #: 38-05169 Rev. *B
Features
Note:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
• High speed
• Low active power
• Low CMOS standby power (Commercial L version)
• 2.0V Data Retention (400 µW at 2.0V retention)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
• Available in Pb-free and non Pb-free 36-Lead (400-Mil)
CE
WE
OE
Logic Block Diagram
— t
— 1320 mW (max.)
— 2.75 mW (max.)
Molded SOJ
A
A
A
A
A
A
A
A
A
A
A
10
0
1
2
3
4
5
6
7
8
9
AA
= 12 ns
INPUT BUFFER
DECODER
COLUMN
512K x 8
ARRAY
POWER
DOWN
198 Champion Court
Functional Description
The CY7C1049B is a high-performance CMOS static RAM
organized as 524,288 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. Writing
to the device is accomplished by taking Chip Enable (CE) and
Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O
through I/O
address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1049B is available in a standard 400-mil-wide
36-pin SOJ package with center power and ground (revolu-
tionary) pinout.
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
0
1
2
3
4
5
6
7
San Jose
7
) is then written into the location specified on the
0
through A
,
512K x 8 Static RAM
Pin Configuration
CA 95134-1709
GND
V
I/O3
I/O
I/O
I/O
WE
CE
CC
A
A
A
A
A
A
A
A
A
A
0
1
2
3
4
0
1
2
5
6
7
8
9
18
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
).
[1]
0
SOJ
Revised August 31, 2006
through I/O
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A
A
A
A
OE
I/O
I/O
GND
V
I/O
I/O
A
A
A
A
A
NC
18
17
16
15
CC
14
13
12
11
10
CY7C1049B
7
6
5
4
7
) are placed in a
408-943-2600
0
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Related parts for CY7C1049B-12VC

CY7C1049B-12VC Summary of contents

Page 1

... For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05169 Rev. *B Functional Description The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW ...

Page 2

... MAX > > < MAX , Com’l CC – 0.3V, CC Com’l L > V – 0.3V, CC < 0.3V Ind’l IN CY7C1049B -15 - 220 195 0.5 Ambient Temperature V CC 0°C to +70°C 4.5V–5.5V –40°C to +85°C -15 -17 Min. Max. Min. Max. 2.4 2.4 ...

Page 3

... Note: 3. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05169 Rev. *B Test Conditions T = 25° MHz 5. 481 Ω 5V 3.0V R2 GND 5 pF 255Ω ≤ (b) CY7C1049B Max. Unit ALL INPUT PULSES 90% 90% 10% 10% ≤ Page [+] Feedback ...

Page 4

... Over the Operating Range Conditions Com’ 2.0V > V – 0. > V – 0. time has to be provided initially before a read/write operation power is less than less than t , and t HZCE LZCE HZOE LZOE HZWE and t HZWE CY7C1049B -15 -17 Min. Max. Min. Max. Unit ...

Page 5

... PU CC SUPPLY CURRENT Notes: 12. Device is continuously selected HIGH for read cycle. 14. Address valid prior to or coincident with CE transition LOW. Document #: 38-05169 Rev. *B DATA RETENTION MODE 3.0V V > OHA DOE DATA VALID 50% CY7C1049B 3. DATA VALID t HZOE t HZCE HIGH IMPEDANCE 50 Page [+] Feedback ...

Page 6

... If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. 17. During this period the I/Os are in the output state and input signals should not be applied. Document #: 38-05169 Rev SCE SA t SCE PWE t SD DATA VALID [15, 16 SCE PWE t SD DATA VALID IN CY7C1049B Page [+] Feedback ...

Page 7

... Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS NOTE 17 DATA I/O t HZWE Ordering Information Speed (ns) Ordering Code 12 CY7C1049B-12VC CY7C1049B-12VXC 15 CY7C1049B-15VC CY7C1049B-15VXC CY7C1049B-15VI CY7C1049B-15VXI 17 CY7C1049BL-17VC Document #: 38-05169 Rev. *B [16 SCE PWE t SD DATA VALID Package Name Package Type 51-85090 36-Lead (400-Mil) Molded SOJ ...

Page 8

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C1049B 51-85090-*B ...

Page 9

... Document History Page Document Title: CY7C1049B 512K x 8 Static RAM Document Number: 38-05169 Issue Orig. of REV. ECN NO. Date Change ** 110209 12/02/01 *A 116465 09/16/02 *B 498501 See ECN Document #: 38-05169 Rev. *B Description of Change SZV Change from Spec number: 38-00937 to 38-05169 CEA Add applications foot note to data sheet, page 1 ...

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