2SC2510A Toshiba, 2SC2510A Datasheet
2SC2510A
Manufacturer Part Number
2SC2510A
Description
Manufacturer
Toshiba
Datasheet
1.2SC2510A.pdf
(4 pages)
Specifications of 2SC2510A
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
35V
Collector-base Voltage
60V
Emitter-base Voltage
4V
Collector Current (dc) (max)
20A
Dc Current Gain (min)
10
Power Dissipation
250W
Frequency (max)
30MHz
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Screw
Pin Count
4
Package Type
2-13B1A
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC2510A
Manufacturer:
HITTITE
Quantity:
101
2~30MHz SSB Linear Power Amplifier Applications
(28V Supply Voltage Use)
Absolute Maximum Ratings
Marking
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note: Using continuously under heavy loads (e.g. the application of high
Specified 28V, 28MHz Characteristics
Output Power
Power Gain
Collector Efficiency
Intermodulation Distortion : IMD = −30dB (Max.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
CHARACTERISTIC
2SC2510
TOSHIBA
JAPAN
TOSHIBA Transistor Silicon Npn Epitaxial Planar Type
: Po = 150W
: Gp = 12.2dB (Min.)
: η
Dot
Lot No.
C
= 35% (Min.)
(Tc = 25°C)
SYMBOL
V
V
V
V
2SC2510A
T
P
CBO
CEO
EBO
CES
I
T
stg
C
C
PEP
j
(Min.)
−65~175
RATING
250
175
60
60
35
20
4
1
UNIT
°C
°C
W
V
V
V
V
A
Weight: 5.2g (typ.)
JEDEC
EIAJ
TOSHIBA
2−13B1A
2SC2510A
2007-11-01
—
—
Unit in mm
Related parts for 2SC2510A
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
2SC2510A Summary of contents
Page 1
... JAPAN Dot Lot No. 2SC2510A (Min.) PEP = 35% (Min.) C (Tc = 25°C) SYMBOL RATING UNIT V 60 CBO V 60 CES V 35 CEO V 4 EBO 250 C T 175 j T −65~175 stg 1 2SC2510A JEDEC — W EIAJ — °C TOSHIBA 2−13B1A °C Weight: 5.2g (typ.) 2007-11-01 Unit in mm ...
Page 2
... 28.001MHz 100mA idle η 150W (Fig.) PEP IMD 28V 28.000MHz 28.001MHz 150W PEP Z out 2 2SC2510A MIN. TYP. MAX. 35 — — — — 4 — — 10 — — — 450 600 12.2 13.3 — — — — — — −30 1.4 — ...
Page 3
... Fig. Pi Test Circuit Caution These are only typical curves and devices are not necessarily guaranteed at these curves. 3 2SC2510A 2007-11-01 ...
Page 4
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2SC2510A 2007-11-01 ...