71V256SA10YG

Manufacturer Part Number71V256SA10YG
ManufacturerIDT, Integrated Device Technology Inc
71V256SA10YG datasheet
 


Specifications of 71V256SA10YG

Density256KbAccess Time (max)10ns
Sync/asyncAsynchronousArchitectureNot Required
Clock Freq (max)Not RequiredMHzOperating Supply Voltage (typ)3.3V
Address Bus15bPackage TypeSOJ
Operating Temp Range0C to 70CNumber Of Ports1
Supply Current100mAOperating Supply Voltage (min)3V
Operating Supply Voltage (max)3.6VOperating Temperature ClassificationCommercial
MountingSurface MountPin Count28
Word Size8bNumber Of Words32K
Lead Free Status / Rohs StatusCompliant  
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Features
Ideal for high-performance processor secondary cache
Commercial (0°C to +70°C) and Industrial (–40°C to +85°C)
temperature range options
Fast access times:
– Commercial and Industrial: 10/12/15/20ns
Low standby current (maximum):
– 2mA full standby
Small packages for space-efficient layouts:
– 28-pin 300 mil SOJ
– 28-pin TSOP Type I
Produced with advanced high-performance CMOS
technology
Inputs and outputs are LVTTL-compatible
Single 3.3V(±0.3V) power supply
Functional Block Diagram
A
0
ADDRESS
DECODER
A
14
I/O
0
INPUT
DATA
CIRCUIT
I/O
7
CS
CONTROL
OE
CIRCUIT
WE
©2004 Integrated Device Technology, Inc.
Lower Power
3.3V CMOS Fast SRAM
256K (32K x 8-Bit)
Description
The IDT71V256SA is a 262,144-bit high-speed static RAM organized
as 32K x 8. It is fabricated using IDT’s high-performance, high-reliability
CMOS technology.
The IDT71V256SA has outstanding low power characteristics while
at the same time maintaining very high performance. Address access
times of as fast as 10ns are ideal for 3.3V secondary cache in 3.3V
desktop designs.
When power management logic puts the IDT71V256SA in standby
mode, its very low power characteristics contribute to extended battery life.
By taking CS HIGH, the SRAM will automatically go to a low power standby
mode and will remain in standby as long as CS remains HIGH. Further-
more, under full standby mode (CS at CMOS level, f=0), power consump-
tion is guaranteed to always be less than 6.6mW and typically will be much
smaller.
The IDT71V256SA is packaged in a 28-pin 300 mil SOJ and a 28-pin
300 mil TSOP Type I.
262,144 BIT
MEMORY ARRAY
I/O CONTROL
1
IDT71V256SA
V
CC
GND
,
3101 drw 01
FEBRUARY 2009
DSC-3101/08

71V256SA10YG Summary of contents

  • Page 1

    ... When power management logic puts the IDT71V256SA in standby mode, its very low power characteristics contribute to extended battery life. By taking CS HIGH, the SRAM will automatically low power standby mode and will remain in standby as long as CS remains HIGH. Further- more, under full standby mode (CS at CMOS level, f=0), power consump- tion is guaranteed to always be less than 6 ...

  • Page 2

    IDT71V256SA 3.3V CMOS Static RAM 256K (32K x 8-Bit) Pin Configurations SO28 ...

  • Page 3

    IDT71V256SA 3.3V CMOS Static RAM 256K (32K x 8-Bit) Recommended DC Operating Conditions Symbol Parameter Min. V Supply Voltage 3.0 CC GND Ground V Input High Voltage - Inputs 2 Input High Voltage - I/O 2 ...

  • Page 4

    IDT71V256SA 3.3V CMOS Static RAM 256K (32K x 8-Bit) AC Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test Load 3.3V 320 DATA OUT 350 Figure 1. AC Test Load AC Electrical ...

  • Page 5

    IDT71V256SA 3.3V CMOS Static RAM 256K (32K x 8-Bit) Timing Waveform of Read Cycle No. 1 ADDRESS OE CS DATA OUT NOTES HIGH for Read cycle. 2. Transition is measured ±200mV from steady state. Timing Waveform of ...

  • Page 6

    IDT71V256SA 3.3V CMOS Static RAM 256K (32K x 8-Bit) Timing Waveform of Write Cycle No. 1 (WE Controlled Timing) ADDRESS DATA (3) OUT DATA IN NOTES write occurs during the overlap of a ...

  • Page 7

    IDT71V256SA 3.3V CMOS Static RAM 256K (32K x 8-Bit) Ordering Information — Commercial and Industrial 71V256 SA XX Device Power Speed Package Type Process/ Tape & Reel Temperature Range 6.42 7 Commercial and Industrial Temperature Ranges X ...

  • Page 8

    IDT71V256SA 3.3V CMOS Static RAM 256K (32K x 8-Bit) Datasheet Document History 1/7/ Pg. 6 Pg. 7 Pg. 8 08/09/00 02/01/01 06/21/02 Pg. 7 01/30/04 Pg. 7 02/20/09 Pg.7 CORPORATE HEADQUARTERS ...