PDTC143TM NXP Semiconductors, PDTC143TM Datasheet - Page 2

PDTC143TM

Manufacturer Part Number
PDTC143TM
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTC143TM

Transistor Polarity
NPN
Collector-emitter Voltage
50V
Dc Current Gain (min)
200
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-883
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit applications.
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
2004 Aug 06
PDTC143TE
PDTC143TEF
PDTC143TK
PDTC143TM
PDTC143TS
PDTC143TT
PDTC143TU
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
SOT54 (TO-92)
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT323
SOT23
PACKAGE
SC-101
SC-75
SC-89
SC-59
SC-43
SC-70
EIAJ
2
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
V
I
R1
R2
SYMBOL
O
CEO
collector-emitter
voltage
output current (DC)
bias resistor
open
MARKING CODE
PARAMETER
TC143T
*33
*52
DM
40
52
11
(1)
(1)
PDTC143T series
4.7
PDTA143TE
PDTA143TEF
PDTA143TK
PDTA143TM
PDTA143TS
PDTA143TT
PDTA143TU
PNP COMPLEMENT
TYP.
Product data sheet
50
100
MAX.
V
mA
UNIT

Related parts for PDTC143TM