K6T1008C2E-GB70 Samsung Semiconductor, K6T1008C2E-GB70 Datasheet
K6T1008C2E-GB70
Specifications of K6T1008C2E-GB70
Available stocks
Related parts for K6T1008C2E-GB70
K6T1008C2E-GB70 Summary of contents
Page 1
... K6T1008C2E Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History 0.0 Design target 1.0 Finalize - Improve t form 55ns to 50ns for 70ns product Remove 55ns speed bin from industrial product. 1.01 Errata correction 2.0 Revise 3.0 Revise - Add 55ns parts to industrial products ...
Page 2
... No Connection SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNG s advanced CMOS process technology. The families support various operating temperature ranges and have various pack- age types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current ...
Page 3
... K6T1008C2E-DB55 32-DIP, 55ns, LL Pwr K6T1008C2E-DB70 32-DIP, 70ns, LL Pwr K6T1008C2E-GL55 32-SOP, 55ns, L Pwr K6T1008C2E-GL70 32-SOP, 70ns, L Pwr K6T1008C2E-GB55 32-SOP, 55ns, LL Pwr K6T1008C2E-GB70 32-SOP, 70ns, LL Pwr K6T1008C2E-TB55 32-TSOP-F, 55ns, LL Pwr K6T1008C2E-TB70 32-TSOP-F, 70ns, LL Pwr K6T1008C2E-RB55 32-TSOP-R, 55ns, LL Pwr K6T1008C2E-RB70 32-TSOP-R, 70ns, LL Pwr FUNCTIONAL DESCRIPTION ...
Page 4
... Output low voltage V OL Output high voltage V OH Standby Current(TTL Standby Current(CMOS) I SB1 for Low power product, in case of Low Low power products are comercial=10 A, industrial= Product K6T1008C2E Family All Family K6T1008C2E Family K6T1008C2E Family Symbol Test Condition Test Conditions V =Vss to Vcc IN CS ...
Page 5
... K6T1008C2E Family AC OPERATING CONDITIONS TEST CONDITIONS ( Test Load and Input/Output Reference) Input pulse level: 0.8 to 2.4V Input rising and falling time: 5ns Input and output reference voltage:1.5V Output load(see right): C =100pF+1TTL L C =50pF+1TTL L AC CHARACTERISTICS (V =4.5~5.5V, Commercial Product Industrial Product Parameter List ...
Page 6
... K6T1008C2E Family TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) Address Data Out Previous Data Valid TIMING WAVEFORM OF READ CYCLE(2) Address High-Z Data out NOTES (READ CYCLE and are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage ...
Page 7
... K6T1008C2E Family TIMING WAVEFORM OF WRITE CYCLE(1) Address Data in Data Undefined Data out TIMING WAVEFORM OF WRITE CYCLE(2) Address Data in Data out (WE Controlled CW( CW(2) t WP(1) t AS( Data Valid t WHZ (CS Controlled CW(2) AS( WP( Data Valid High-Z 7 CMOS SRAM t WR( WR( High-Z Revision 4.0 May 2002 ...
Page 8
... K6T1008C2E Family TIMING WAVEFORM OF WRITE CYCLE(3) Address Data in Data out NOTES (WRITE CYCLE write occurs during the overlap of a low CS CS going high and WE going low: A write end at the earliest transition among measured from the begining of write to the end of write measured from the CS ...
Page 9
... K6T1008C2E Family PACKAGE DIMENSIONS 32 DUAL INLINE PACKAGE (600mil) #32 13.60 0.20 0.535 0.008 #1 1. 0.075 32 PLASTIC SMALL OUTLINE PACKAGE (525mil) #32 #1 20.87 0.822 20.47 0.806 +0.100 0.41 -0.050 0. +0.004 0.016 0.028 -0.002 42.31 MAX 1.666 41.91 0.20 1.650 0.008 0.46 0.10 0.018 ...
Page 10
... K6T1008C2E Family PACKAGE DIMENSIONS 32 PIN THIN SMALL OUTLINE PACKAGE TYPE I (0820F) +0.10 0.20 -0.05 +0.004 0.008 -0.002 #1 0.50 0.0197 #16 0.25 TYP 0.010 0~8 0.45 ~0.75 0.018 ~0.030 32 THIN SMALL OUTLINE PACKAGE TYPE I (0820R) +0.10 0.20 -0.05 +0.004 0.008 -0.002 #16 0.50 0.0197 #1 0 ...