K6T1008C2E-GB70 Samsung Semiconductor, K6T1008C2E-GB70 Datasheet - Page 2

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K6T1008C2E-GB70

Manufacturer Part Number
K6T1008C2E-GB70
Description
Manufacturer
Samsung Semiconductor
Datasheet

Specifications of K6T1008C2E-GB70

Density
1Mb
Access Time (max)
70ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
17b
Package Type
SOP
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
50mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
128K
Lead Free Status / Rohs Status
Not Compliant

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VSS
I/O1
I/O2
I/O3
A16
A14
A12
NC
PIN DESCRIPTION
K6T1008C2E Family
128Kx8 bit Low Power CMOS Static RAM
PRODUCT FAMILY
1. The parameters are tested with 50pF test load
A7
A6
A5
A4
A3
A2
A1
A0
FEATURES
K6T1008C2E-L
K6T1008C2E-B
K6T1008C2E-P
K6T1008C2E-F
K6T1008C2E-Q
Process Technology: TFT
Organization: 128K x 8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-DIP-600, 32-SOP-525,
Product Family
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CS
I/O
A
32-SOP
Name
32-DIP
0
WE
Vcc
Vss
OE
1
NC
1
~A
~I/O
, CS
16
2
8
32-TSOP1-0820F/R
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
Operating Temperature
Automotive(-40~125 C)
Chip Select Input
Output Enable Input
Write Enable Input
Data Inputs/Outputs
Address Inputs
Power
Ground
No Connection
Commercial(0~70 C)
Industrial(-40~85 C)
VCC
VCC
CS2
CS2
A14
A13
A15
A12
A12
A14
A16
A13
A11
A11
WE
A16
A15
WE
NC
NC
A9
A7
A6
A5
A7
A8
A8
A5
A4
A4
A6
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
Function
Type1-Reverse
Type1-Forward
32-TSOP
32-TSOP
Vcc Range
4.5~5.5V
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS1
A10
OE
55
2
Speed
1)
/70ns
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
advanced CMOS process technology. The families support
various operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
The K6T1008C2E families are fabricated by SAMSUNG s
CS
CS
WE
OE
1
2
I/O
I/O
Raw
Address
(I
1
8
Control
logic
Standby
SB1
Power Dissipation
50 A
10 A
50 A
15 A
50 A
, Max)
Clk gen.
(I
Operating
CC2,
Data
cont
Data
cont
50mA
Row
select
Max)
CMOS SRAM
32-DIP-600, 32-SOP-525
32-TSOP1-0820F/R
32-SOP -525
32-TSOP1-0820F/R
32-SOP -525
Precharge circuit.
Memory array
1024 rows
128 8 columns
Column Address
Column select
I/O Circuit
PKG Type
Revision 4.0
May 2002

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