K6T1008C2E-GB70 Samsung Semiconductor, K6T1008C2E-GB70 Datasheet - Page 6

• Manufacturer Part Number: K6T1008C2E-GB70
• Manufacturer: Samsung Semiconductor

Specifications of K6T1008C2E-GB70

• Density: 1Mb
• Access Time (max): 70ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 17b
• Package Type: SOP
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 50mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 32
• Word Size: 8b
• Number Of Words: 128K
• Lead Free Status / Rohs Status: Not Compliant

K6T1008C2E Family
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
NOTES (READ CYCLE)
1.
2. At any given temperature and voltage condition,
Address
CS
CS
OE
Data out
t
levels.
interconnection.
HZ
1
2
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
Previous Data Valid
High-Z
t
LZ
t
t
OLZ
(Address Controlled
t
(WE=V
HZ
OH
(Max.) is less than
t
AA
t
t
CO2
CO1
IH
t
)
OE
t
AA
6
,
t
CS1=OE=V
RC
t
t
RC
LZ
(Min.) both for a given device and from device to device
IL
, CS2=WE=V
Data Valid
IH
)
Data Valid
t
t
OHZ
OH
t
HZ(1,2)
CMOS SRAM
Revision 4.0
May 2002