K6T1008C2E-GB70 Samsung Semiconductor, K6T1008C2E-GB70 Datasheet - Page 7

• Manufacturer Part Number: K6T1008C2E-GB70
• Manufacturer: Samsung Semiconductor

Specifications of K6T1008C2E-GB70

• Density: 1Mb
• Access Time (max): 70ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 17b
• Package Type: SOP
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 50mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 32
• Word Size: 8b
• Number Of Words: 128K
• Lead Free Status / Rohs Status: Not Compliant

K6T1008C2E Family
TIMING WAVEFORM OF WRITE CYCLE(1)
TIMING WAVEFORM OF WRITE CYCLE(2)
Address
CS
CS
WE
Data in
Data out
Address
CS
CS
WE
Data in
Data out
1
2
1
2
Data Undefined
High-Z
t
t
AS(3)
AS(3)
(CS
(WE Controlled)
1
Controlled)
t
WHZ
7
t
AW
t
AW
t
t
WC
CW(2)
t
CW(2)
t
t
WC
CW(2)
t
WP(1)
t
WP(1)
t
t
DW
DW
Data Valid
Data Valid
t
WR(4)
t
WR(4)
t
t
DH
DH
t
OW
High-Z
CMOS SRAM
Revision 4.0
May 2002