MMDF2C02ER2 ON Semiconductor, MMDF2C02ER2 Datasheet

MMDF2C02ER2

Manufacturer Part Number

MMDF2C02ER2

Description

Manufacturer

ON Semiconductor

Datasheet

1.MMDF2C02ER2.pdf (12 pages)

Specifications of MMDF2C02ER2

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Lead Free Status / Rohs Status

Not Compliant

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Company

Part Number

Manufacturer

Quantity

Price

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Part Number:

MMDF2C02ER2

Manufacturer:

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Quantity:

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Company:

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Part Number:

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Complementary SO–8, Dual

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain–to–source diode has a low reverse recovery time. MiniMOSt

devices are designed for use in low voltage, high speed switching

applications where power efficiency is important. Typical applications

are dc–dc converters, and power management in portable and battery

powered products such as computers, printers, cellular and cordless

phones. They can also be used for low voltage motor controls in mass

storage products such as disk drives and tape drives. The avalanche

energy is specified to eliminate the guesswork in designs where

inductive loads are switched and offer additional safety margin against

unexpected voltage transients.

1. Negative signs for P–Channel device omitted for clarity.

2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

November, 2000 – Rev. 6

MAXIMUM RATINGS

Drain–to–Source Voltage

Gate–to–Source Voltage

Drain Current – Continuous N–Channel

Operating and Storage Temperature Range

Total Power Dissipation @ T A = 25 C (Note 2.)

Single Pulse Drain–to–Source Avalanche

Thermal Resistance – Junction to Ambient

Maximum Lead Temperature for Soldering,

These miniature surface mount MOSFETs feature ultra low R DS(on)

Life

Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery

Logic Level Gate Drive – Can Be Driven by Logic ICs

Miniature SO–8 Surface Mount Package – Saves Board Space

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, with Soft Recovery

Avalanche Energy Specified

Mounting Information for SO–8 Package Provided

Semiconductor Components Industries, LLC, 2000

one die operating, 10 sec. max.

Energy – Starting T J = 25 C

(V DD = 20 V, V GS = 10 V, Peak I L = 9.0 A, L

= 6.0 mH, R G = 25 )

(V DD = 20 V, V GS = 10 V, Peak I L = 7.0 A, L

= 10 mH, R G = 25 )

(Note 2.)

0.0625 from case. Time in Solder Bath is

10 seconds.

– Pulsed

Rating

(T J = 25 C unless otherwise noted) (Note 1.)

P–Channel

N–Channel

P–Channel

N–Channel

P–Channel

Symbol

T J and

V DSS

R JA

V GS

E AS

I DM

T stg

P D

T L

I D

to 150

Value

– 55

62.5

245

260

3.6

2.5

2.0

Watts

Unit

Vdc

Adc

C/W

R DS(on) = 100 mW (N–Channel)

MMDF2C02ER2

R DS(on) = 250 mW (P–Channel)

Device

N–Source

P–Source

N–Channel

N–Gate

P–Gate

ORDERING INFORMATION

2.5 AMPERES

PIN ASSIGNMENT

http://onsemi.com

25 VOLTS

SO–8, Dual

CASE 751

STYLE 14

= Location Code

= Year

= Work Week

Package

Top View

SO–8

Publication Order Number:

2500 Tape & Reel

P–Channel

MMDF2C02E/D

N–Drain

P–Drain

MARKING

DIAGRAM

Shipping

F2C02

LYWW

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