2SK2845 Toshiba, 2SK2845 Datasheet
2SK2845
Manufacturer Part Number
2SK2845
Description
Manufacturer
Toshiba
Type
Power MOSFETr
Datasheet
1.2SK2845.pdf
(6 pages)
Specifications of 2SK2845
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
9Ohm
Drain-source On-volt
900V
Gate-source Voltage (max)
±30V
Continuous Drain Current
1A
Power Dissipation
40W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
DP
Lead Free Status / Rohs Status
Not Compliant
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON-resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel
This transistor is an electrostatic-sensitive device. Handle with care.
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
temperature
Characteristic
DD
Characteristic
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSIII)
= 90 V, T
GS
Pulse (Note 1)
DC (Note 1)
= 20 kΩ)
ch
: I
: V
DSS
th
= 25°C (initial), L = 594 mH, R
(Note 2)
= 2.0 to 4.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
Symbol
: R
: |Y
V
V
V
E
E
T
I
I
T
R
R
DGR
P
GSS
DSS
I
DP
AR
Symbol
stg
AS
AR
D
ch
th (ch−c)
th (ch−a)
D
DS (ON)
2SK2845
fs
| = 0.9 S (typ.)
DS
= 10 V, I
DS
= 8.0 Ω (typ.)
−55 to 150
= 720 V)
Rating
900
900
±30
324
150
4.0
40
3.125
1
3
1
Max
1
125
G
D
= 25 Ω, I
= 1 mA)
°C / W
°C / W
AR
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
= 1 A
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
0.6 ± 0.15
0.95 MAX.
JEDEC
JEITA
TOSHIBA
0.6 ± 0.15
0.95 MAX.
JEDEC
JEITA
TOSHIBA
0.6 ± 0.15
1. GATE
2. DRAIN
3. SOURSE
1. GATE
2. DRAIN
3. SOURSE
（HEAT SINK）
（HEAT SINK）
1
1
6.8 MAX.
5.2 ± 0.2
2.3
2.3
5.2 ± 0.2
6.8 MAX.
2.3
2
2
2.3
2.3
2.3
3
3
2-7B5B
2-7B7B
SC-64
2009-07-13
―
―
―
2SK2845
1
1
Unit: mm
0.6 MAX.
0.6 MAX.
0.6 MAX.
0.6 MAX.
2
3
2
3
Related parts for 2SK2845
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
2SK2845 Summary of contents
Page 1
... T −55 to 150 °C stg Symbol Max Unit R 3.125 ° (ch−c) R 125 ° (ch− Ω 2SK2845 Unit: mm 6.8 MAX. 5.2 ± 0.2 0.6 MAX. 0.95 MAX. 0.6 ± 0.15 0.6 MAX. 2.3 2 GATE 1 2. DRAIN （HEAT SINK） 3. SOURSE 3 JEDEC ― ...
Page 2
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2SK2845 Min Typ. Max — — ...
Page 3
... 3 2SK2845 2009-07-13 ...
Page 4
... 4 2SK2845 2009-07-13 ...
Page 5
... Ω 594 2SK2845 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD 2009-07-13 ...
Page 6
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK2845 2009-07-13 ...