LM6172AMJ-QML National Semiconductor, LM6172AMJ-QML Datasheet - Page 5

• Manufacturer Part Number: LM6172AMJ-QML
• Manufacturer: National Semiconductor
• Type: Voltage Feedback Amplifierr

Specifications of LM6172AMJ-QML

• Rail/rail I/o Type: No
• Number Of Elements: 2
• Unity Gain Bandwidth Product: 80MHz
• Slew Rate: 1700V/us
• Common Mode Rejection Ratio: 70dB
• Input Offset Voltage: 1mV
• Input Bias Current: 2.5uA
• Single Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (typ): ±3/±5/±9/±12/±15V
• Power Dissipation: 1.03W
• Voltage Gain In Db: 70dB
• Power Supply Rejection Ratio: 75dB
• Power Supply Requirement: Dual
• Shut Down Feature: No
• Single Supply Voltage (min): Not RequiredV
• Single Supply Voltage (max): Not RequiredV
• Dual Supply Voltage (min): ±2.75V
• Dual Supply Voltage (max): ±18V
• Technology: BiCOM
• Operating Temp Range: -55C to 125C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 8
• Package Type: CDIP
• Lead Free Status / Rohs Status: Not Compliant

MNLM6172AM-X REV 2A1
Supply Voltage (V+ - V-)
Differential Input Voltage
Maximum Junction Temperature
Power Dissipation
Output Short Circuit to Ground
Operating Temperature Range
Storage Temperature Range
Thermal Resistance
Package Weight
ESD Tolerance
Note 1:
Note 2:
Note 3:
(Note 6)
(Note 2, 3)
(Note 4)
(Note 7)
(Note 5)
(Absolute Maximum Ratings)
(Note 1)
ThetaJA
ThetaJC
(Typical)
Human Body Model
CERAMIC SOIC
CERAMIC DIP
CERAMIC SOIC
(Note 3)
8-Pin CERAMIC DIP (Still Air)
CERAMIC SOIC
8-Pin CERAMIC DIP
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
The package material for these devices allows much improved heat transfer over our
standard ceramic packages. In order to take full advantage of this improved heat
transfer, heat sinking must be provided between the package base (directly beneath
the die), and either metal traces on, or thermal vias through, the printed circuit
board. Without this additional heat sinking, device power dissipation must be
calculated using junction-to-ambient, rather than junction-to-case, thermal
resistance. It must not be assumed that the device leads will provide substantial
heat transfer out of the package, since the thermal resistance of the leadframe
material is very poor, relative to the material of the package base. The stated
junction-to-case thermal resistance is for the package material only, and does not
account for the additional thermal resistance between the package base and the
printed circuit board. The user must determine the value of the additional thermal
resistance and must combine this with the stated value for the package, to calculate
the total allowed power dissipation for the device.
(500LF/Min Air flow)
(Still Air)
(500LF/Min Air flow)
5
36V
+10V
150 C
1.03W
Continuous
-55 C < Ta < +125 C
-65 C < Ta < +150 C
100 C/W
124 C/W
980mg
365mg
4kV
46 C/W
74 C/W
2 C/W
6 C/W
MICROCIRCUIT DATA SHEET