SSP7N60B Fairchild Semiconductor, SSP7N60B Datasheet
SSP7N60B
Specifications of SSP7N60B
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SSP7N60B Summary of contents
Page 1
... C Parameter = 1 DS(on) GS (Note SSP7N60B SSS7N60B Units 600 V 7.0 7 4.4 4 420 mJ 7.0 A 14.7 mJ 5.5 V/ns 147 48 W 1.18 0.38 W/°C -55 to +150 °C 300 °C SSP7N60B SSS7N60B Units 0.85 2.6 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. B, June 2002 ...
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... V ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature 6. Only for back side 4.0kV and t = 0.3s iso ©2002 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C ...
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... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3000 2500 2000 C iss 1500 C 1000 oss C 500 rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2002 Fairchild Semiconductor Corporation 1 10 150 ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics ※ Note : ℃ ...
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... DS(on ※ Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for SSP7N60B Case Temperature [ ℃ Figure 10. Maximum Drain Current vs Case Temperature ©2002 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.5 D ...
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... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for SSP7N60B Figure 11-2. Transient Thermal Response Curve for SSS7N60B ©2002 Fairchild Semiconductor Corporation (Continued) ※ θ tio ※ tio ( ℃ ( θ ( ℃ θ (t) θ Rev. B, June 2002 ...
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... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2002 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2002 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...
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... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2002 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Dimensions in Millimeters Rev. B, June 2002 ...
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... Package Dimensions (Continued) 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2002 Fairchild Semiconductor Corporation TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Dimensions in Millimeters Rev. B, June 2002 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...