M30622SFP Renesas Electronics America, M30622SFP Datasheet - Page 47

• Manufacturer Part Number: M30622SFP
• Manufacturer: Renesas Electronics America

Specifications of M30622SFP

• Cpu Family: M16C
• Device Core Size: 16/32Bit
• Frequency (max): 24MHz
• Interface Type: I2C/IEBus/UART
• Program Memory Type: ROMLess
• Program Memory Size: Not Required
• Total Internal Ram Size: 4KB
• # I/os (max): 87
• Number Of Timers - General Purpose: 11
• Operating Supply Voltage (typ): 3.3/5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 3V
• On-chip Adc: 26-chx10-bit
• On-chip Dac: 2-chx8-bit
• Instruction Set Architecture: CISC
• Mounting: Surface Mount
• Pin Count: 100
• Package Type: PQFP
• Lead Free Status / Rohs Status: Not Compliant

M16C/62P Group (M16C/62P, M16C/62PT)
Rev.2.41
REJ03B0001-0241
Table 5.6
Table 5.7
NOTES:
Table 5.8
−
−
−
−
−
−
−
−
t
−
−
−
−
−
t
−
PS
PS
Symbol
Symbol
1. Referenced to V
2. n denotes the number of block erases.
3. Program and Erase Endurance refers to the number of times a block erase can be performed.
4. Maximum number of E/W cycles for which operation is guaranteed.
5. Topr = -40 to 85 ° C (D3, D7, U3, U7) / -20 to 85 ° C (D5, D9, U5, U9).
6. Referenced to V
7. Table 5.7 applies for block A or block 1 program and erase endurance > 1,000. Otherwise, use Table 5.6.
8. To reduce the number of program and erase endurance when working with systems requiring numerous rewrites, write to
9. Should erase error occur during block erase, attempt to execute clear status register command, then block erase command
10. Set the PM17 bit in the PM1 register to “1” (wait state) when executing more than 100 times rewrites (D7, D9, U7 and U9).
11. Customers desiring E/W failure rate information should contact their Renesas technical support representative.
If the program and erase endurance is n (n=100, 1,000, or 10,000), each block can be erased n times.
For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as
one program and erase endurance. Data cannot be written to the same address more than once without erasing the block.
(Rewrite prohibited)
unused word addresses within the block instead of rewrite. Erase block only after all possible addresses are used. For
example, an 8-word program can be written 256 times maximum before erase becomes necessary.
Maintaining an equal number of erasure between block A and block 1 will also improve efficiency. It is important to track the
total number of times erasure is used.
at least three times until erase error disappears.
V
Jan 10, 2006
CC1
Flash Program, Erase Voltage
= 3.3 V ± 0.3 V or 5.0 V ± 0.5 V
Program and Erase Endurance
Word Program Time (V
Lock Bit Program Time
Block Erase Time
(V
Erase All Unlocked Blocks Time
Flash Memory Circuit Stabilization Wait Time
Data Hold Time
Program and Erase Endurance
Word Program Time (V
Lock Bit Program Time
Block Erase Time
(V
Flash Memory Circuit Stabilization Wait Time
Data Hold Time
U5)
CC1
Flash Memory Version Electrical Characteristics
U7, U9) (Block A and Block 1
CC1
Characteristics (at T
-20 to 85 °C(D9, U9))
Flash Memory Version Electrical Characteristics
Flash Memory Version Program / Erase Voltage and Read Operation Voltage
=5.0V )
=5.0V )
CC1
CC1
=4.5 to 5.5V, 3.0 to 3.6V at Topr = 0 to 60 ° C (D3, D5, U3, U5) unless otherwise specified.
= 4.5 to 5.5V, 3.0 to 3.6V at T
Page 45 of 96
(5)
(5)
CC1
CC1
=5.0V )
=5.0V )
Parameter
Parameter
opr
(3, 8, 9)
(3)
(2)
= 0 to 60 °C(D3, D5, U3, U5), T
opr
(7)
= -40 to 85 °C (D7, U7) / -20 to 85 °C (D9, U9) unless otherwise specified.
)
4-Kbyte block
8-Kbyte block
32-Kbyte block
64-Kbyte block
4-Kbyte block
Flash Read Operation Voltage
V
CC1
=2.7 to 5.5 V
(1)
(6)
10,000
for 100 cycle products (D3, D5, U3,
for 10,000 cycle products (D7, D9,
Min.
Min.
100
opr
10
10
(4)
= -40 to 85 °C(D7, U7) / T
Standard
Standard
Typ.
Typ.
5. Electrical Characteristics
0.3
0.3
0.5
0.8
0.3
25
25
25
25
Max.
Max.
200
200
4×n
15
15
4
4
4
4
cycle
cycle
year
year
Unit
Unit
opr
µ s
µ s
µ s
µ s
µ s
µ s
s
s
s
s
s
s
=