GE28F320C3BD70 Intel, GE28F320C3BD70 Datasheet - Page 24

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GE28F320C3BD70

Manufacturer Part Number
GE28F320C3BD70
Description
Manufacturer
Intel
Datasheet

Specifications of GE28F320C3BD70

Density
32Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
21b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
2M
Supply Current
18mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
Table 7:
6.2
Table 8:
Datasheet
24
Notes:
1.
2.
3.
4.
5.
V
V
V
V
V
V
V
I
I
Sym
I
IL
IH
OL
OH
PPLK
PP1
PP2
PPES
Sym
I
PPWS
PPW
PPE
/
All currents are in RMS unless otherwise noted. Typical values at nominal V
The test conditions V
listed at the top of each column. V
Automatic Power Savings (APS) reduces I
Sampled, not 100% tested.
I
and I
V
V
V
Current
CCES
Input Low
Voltage
Input High
Voltage
Output Low
Voltage
Output High
Voltage
V
Out Voltage
V
Program /
Erase
Operations
Parameter
PP
PP
CC
PP
PP
Erase Current
Program Current
Erase Suspend
CCR
Lock-
during
or I
DC Current Characteristics (Sheet 2 of 2)
DC Voltage Characteristics (Sheet 1 of 2)
Parameter
. If the device is read while in program suspend, current draw is the sum of I
DC Voltage Characteristics
CCWS
is specified with device de-selected. If device is read while in erase suspend, current draw is sum of I
V
Note
V
1,2
CCQ
1
1
CC
CC
Max, V
–0.1V
V
–0.4
1.65
11.4
Min
–0.1
2.0
V
Note
CCQ
V
2.7 V–3.6 V
2.7 V–3.6 V
1,4
1,4
1,4
CCQ
CC
CCQ
Max, V
CC
0.22 V
0.05
0.05
V
+0.3V
Typ
2.7 V–3.6
2.7 V–3.6
0.2
Max
12.6
50
Max = 3.3 V for 0.25μm 32-Mbit devices.
V
CC
1.0
3.6
8
8
0.1
CCQ
CC
V
V
*
CCR
Min, and V
Max
200
0.1
0.1
22
22
5
to approximately standby levels in static operation (CMOS inputs).
V
V
CCQ
CCQ
–0.4
0.4V
0.1V
1.65
11.4
-0.1
Min
2.7 V–2.85 V
1.65 V–2.5 V
2.7 V–2.85 V
1.65 V–2.5 V
0.05
0.05
Typ
0.2
16
50
8
CCQ
Min refer to the maximum or minimum V
Max
200
0.1
0.1
22
45
+0.3V
5
Max
12.6
V
0.4
0.1
1.0
3.6
CCQ
2.7 V–3.3 V
1.8 V–2.5 V
0.05
0.05
Typ
0.2
16
50
8
V
V
CCQ
0.4V
CCQ
0.1V
–0.4
1.65
11.4
Min
-0.1
2.7 V–3.3 V
1.8 V–2.5 V
Max
CC
200
0.1
0.1
22
45
5
, T
A
= +25 °C.
Unit
mA
mA
mA
mA
µA
µA
+0.3V
Max
12.6
V
CCWS
0.4
0.1
1.0
3.6
CCQ
V
Program in Progress
V
Program in Progress
V
Erase in Progress
V
Erase in Progress
V
Program or Erase Suspend in
Progress
V
Program or Erase Suspend in
Progress
PP
PP
PP
PP
PP
PP
and I
= V
=V
= V
= V
= V
= V
Unit
V
V
V
V
V
V
V
Test Conditions
CCR
PP1,
PP2 (12v)
PP1,
PP2 (12v) ,
PP1,
PP2 (12v) ,
CC
.
or V
V
V
I
V
V
I
Complete Write
Protection
Test Conditions
OL
OH
CC
CCQ
CC
CCQ
CCQ
= 100 μA
= –100 μA
= V
= V
= V
= V
C3 Discrete
voltage
CC
CC
March 2008
290645-24
CCQ
CCQ
Min
Min
Min
Min
CCES

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