IPD09N03LA

Manufacturer Part NumberIPD09N03LA
ManufacturerInfineon Technologies
TypePower MOSFET
IPD09N03LA datasheet
 


Specifications of IPD09N03LA

Number Of Elements1PolarityN
Channel ModeEnhancementDrain-source On-res0.0088Ohm
Drain-source On-volt25VGate-source Voltage (max)±20V
Continuous Drain Current50APower Dissipation63W
Operating Temp Range-55C to 175COperating Temperature ClassificationMilitary
MountingSurface MountPin Count2 +Tab
Package TypeTO-252Lead Free Status / Rohs StatusCompliant
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OptiMOS
®
2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Type
IPD09N03LA
Package
P-TO252-3-11
Marking
09N03LA
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
4)
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 2.12
Product Summary
V
DS
R
DS(on),max
1)
for target application
I
D
product (FOM)
IPF09N03LA
IPS09N03LA
P-TO252-3-23
P-TO251-3-11
09N03LA
09N03LA
Symbol Conditions
2)
I
T
=25 °C
D
C
T
=100 °C
C
3)
I
T
=25 °C
D,pulse
C
=25 Ω
E
I
=45 A, R
AS
D
GS
I
=50 A, V
=20 V,
D
DS
dv /dt
di /dt =200 A/µs,
T
=175 °C
j,max
V
GS
P
T
=25 °C
tot
C
T
, T
j
stg
page 1
IPD09N03LA G
IPF09N03LA G
IPS09N03LA G
IPU09N03LA G
25
V
(SMD version)
8.6
mΩ
50
A
IPU09N03LA
P-TO251-3-21
09N03LA
Value
Unit
50
A
45
350
75
mJ
6
kV/µs
±20
V
63
W
-55 ... 175
°C
55/175/56
2008-04-14

IPD09N03LA Summary of contents

  • Page 1

    ... Symbol Conditions =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA (SMD version) 8.6 mΩ IPU09N03LA P-TO251-3-21 09N03LA Value Unit 350 kV/µs ± -55 ... 175 °C 55/175/56 2008-04-14 ...

  • Page 2

    ... A DS( SMD version SMD version |>2 DS(on)max = =2.4 K/W the chip is able to carry 67 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G Values Unit min. typ. max 2.4 K 1.2 1 0.1 1 µ 100 - 10 100 mΩ ...

  • Page 3

    ... DD GS =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G Values Unit min. typ. max. - 1235 1642 pF - 474 630 - 7 5.6 8 3.4 5.1 - 4.3 5 2.0 2.6 - 2.8 4.3 - 5 350 - 0.97 1 2008-04-14 ...

  • Page 4

    ... Rev. 2.12 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0 0. 100 10 [V] DS page 4 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse [s] p 200 ...

  • Page 5

    ... V 7 Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 2.12 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f ° [V] GS page 5 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA =25 ° 4.1 V 3.5 V 3.8 V 3 [A] D =25 ° [ 2008-04-14 ...

  • Page 6

    ... Forward characteristics of reverse diode I =f parameter: T 1000 Ciss 100 10 Crss 0.0 [V] DS page 6 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA 200 µA 20 µA - 100 140 T [° 175 °C, 98% 175 °C 25 °C, 98% 0.5 1.0 1.5 V [V] SD 180 25 °C 2 ...

  • Page 7

    ... Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 2.12 14 Typ. gate charge V =f(Q GS parameter ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA =25 A pulsed gate [nC] gate ate 2008-04-14 ...

  • Page 8

    ... Package Outline Rev. 2.12 IPD09N03LA G IPS09N03LA G PG-TO252-3-11 page 8 IPF09N03LA G IPU09N03LA G 2008-04-14 ...

  • Page 9

    ... Package Outline PG-TO252-3-23: Outline Footprint: Rev. 2.12 IPD09N03LA G IPS09N03LA G PG-TO252-3-23 page 9 IPF09N03LA G IPU09N03LA G 2008-04-14 ...

  • Page 10

    ... Package Outline Rev. 2.12 IPD09N03LA G IPS09N03LA G PG-TO251-3-11 page 10 IPF09N03LA G IPU09N03LA G 2008-04-14 ...

  • Page 11

    ... Package Outline Rev. 2.12 IPD09N03LA G IPS09N03LA G PG-TO251-3-21 page 11 IPF09N03LA G IPU09N03LA G 2008-04-14 ...

  • Page 12

    ... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.12 IPD09N03LA G IPS09N03LA G page 12 IPF09N03LA G IPU09N03LA G ...