IPD09N03LA Infineon Technologies, IPD09N03LA Datasheet - Page 2

• Manufacturer Part Number: IPD09N03LA
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of IPD09N03LA

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0088Ohm
• Drain-source On-volt: 25V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 50A
• Power Dissipation: 63W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / Rohs Status: Compliant

Rev. 2.12
1)
2)
3)
4)
5)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
J-STD20 and JESD22
Current is limited by bondwire; with an R
See figure 3
T
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j,max
=150 °C and duty cycle D <0.25 for V
j
=25 °C, unless otherwise specified
thJC
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
GS
fs
(BR)DSS
GS(th)
=2.4 K/W the chip is able to carry 67 A.
thJC
thJA
DS(on)
G
<-5 V
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
SMD version
V
V
SMD version
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
GS
GS
=25 °C
=125 °C
=30 A
DS
=V
=25 V, V
=25 V, V
=0 V, I
=20 V, V
=4.5 V, I
=4.5 V, I
=10 V, I
=10 V, I
|>2|I
2
cooling area
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
D
=20 µA
D
D
GS
GS
DS
DS(on)max
=30 A
=30 A,
=30 A
=30 A,
=0 V,
=0 V,
=0 V
5)
,
IPS09N03LA G
IPD09N03LA G
min.
1.2
25
23
-
-
-
-
-
-
-
-
-
-
-
Values
11.8
typ.
1.6
0.1
7.4
7.2
10
10
12
46
1
-
-
-
-
IPU09N03LA G
IPF09N03LA G
max.
14.8
100
100
2.4
8.8
8.6
75
50
15
2
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2008-04-14