IPD06N03LA Infineon Technologies, IPD06N03LA Datasheet - Page 6

• Manufacturer Part Number: IPD06N03LA
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of IPD06N03LA

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0057Ohm
• Drain-source On-volt: 25V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 50A
• Power Dissipation: 83W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / Rohs Status: Not Compliant

Rev. 2.2
9 Drain-source on-state resistance
R
11 Typ. Capacitances
C =f(V
DS(on)
10
10
10
10
4
3
2
DS
=f(T
9
8
7
6
5
4
3
2
1
0
10000
1000
100
0
10
-60
); V
j
); I
GS
D
5
-20
=0 V; f =1 MHz
=30 A; V
10
20
GS
98 %
V
Coss
=10 V
T
Ciss
DS
Crss
15
j
60
[°C]
[V]
typ
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
2.5
1.5
0.5
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
D
j
GS
-20
IPS06N03LA G
IPD06N03LA G
=V
0.5
175 °C
DS
20
40 µA
V
T
SD
j
1.0
60
[°C]
25 °C, 98%
[V]
400 µA
100
IPU06N03LA G
IPF06N03LA G
25 °C
1.5
140
175 °C, 98%
2008-04-14
180
2.0