TC58DVM82A1FT00 Toshiba, TC58DVM82A1FT00 Datasheet - Page 18

• Manufacturer Part Number: TC58DVM82A1FT00
• Manufacturer: Toshiba

Specifications of TC58DVM82A1FT00

• Cell Type: NAND
• Density: 256Mb
• Access Time (max): 35ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 25b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 32M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

DEVICE OPERATION
Select page
Select page
RY
RY
Read Mode (1)
Read Mode (2)
CLE
CLE
ALE
ALE
timing details and the block diagram.
/
/
WE
WE
RE
RE
CE
BY
CE
BY
I/O
I/O
N
N
Read mode (1) is set when a 00H command is issued to the Command register. Refer to Figure 3 below for
00H
01H
M
Figure 3. Read mode (1) operation
Figure 4. Read mode (2) operation
m=527
M
M
Start-address input
Start-address input
256
N
N
M
527
m
Busy
Busy
Cell array
Cell array
starts on the rising edge of
address information has been latched). The device will be in
Busy state during this transfer period. The
Low after the third address input and during Busy state.
Serial data can be output synchronously with the RE clock
from the start pointer designated in the address input cycle.
the same as that of Read mode (1). If the start pointer is to be set
after column address 256, use Read mode (2).
A data transfer operation from the cell array to the register
After the transfer period the device returns to Ready state.
The operation of the device after input of the 01H command is
TC58DVM82A1FT00
WE
in the third cycle (after the
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CE
signal must stay