TC58DVM82A1FT00 Toshiba, TC58DVM82A1FT00 Datasheet - Page 27

• Manufacturer Part Number: TC58DVM82A1FT00
• Manufacturer: Toshiba

Specifications of TC58DVM82A1FT00

• Cell Type: NAND
• Density: 256Mb
• Access Time (max): 35ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 25b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 32M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

(9)
circuit.
RY
We recommend that you use this data as a reference
when selecting a resistor value.
A pull-up resistor needs to be used for termination because the
This data may vary from device to device.
/
BY
: termination for the Ready/Busy pin (
Device
V
V
CC
SS
Figure 21.
R
C
L
RY
/
BY
DIN
RY
Ready
t
r
/
BY
1.5 µ s
1.0 µ s
0.5 µ s
)
t
f
V
0
CC
1 K Ω
RY
/
2 K Ω
BY
Busy
t
r
buffer consists of an open drain
R
TC58DVM82A1FT00
t
f
3 K Ω
2003-03-25 27/34
Ta = 25°C
C
L
4 K Ω
= 100 pF
t
r
15 ns
10 ns
5 ns
t
f