TC58DVM82A1FT00 Toshiba, TC58DVM82A1FT00 Datasheet - Page 31

• Manufacturer Part Number: TC58DVM82A1FT00
• Manufacturer: Toshiba

Specifications of TC58DVM82A1FT00

• Cell Type: NAND
• Density: 256Mb
• Access Time (max): 35ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 25b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 32M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

(14)
Bad Block Test Flow
Invalid blocks (bad blocks)
do not use these bad blocks.
The device contains unusable blocks. Therefore, at the time of use, please check whether a block is bad and
Figure 26.
Block No. = Block No. + 1
* 1: No erase operation is allowed to detected bad blocks
Bad Block
Bad Block
No
Block, all bytes are not in the FFh state. Please don’t perform erase
operation to Bad Block.
Figure 27 shows the test flow for bad block detection. Bad blocks which are
detected by the test flow must be managed as unusable blocks by the
system.
isolated from the Bit line by the Select gate
Valid (Good) Block Number
At the time of shipment, all data bytes in a Valid Block are FFh. For Bad
Check if the device has any bad blocks after installation into the system.
A bad block does not affect the performance of good blocks because it is
The number of valid blocks at the time of shipment is as follows:
Block No. = 2048
Block No = 1
Read Check
Figure 27
Start
End
Pass
Yes
Fail
2008
MIN
Read Check : to verify the column address 517
Bad Block * 1
TYP.

TC58DVM82A1FT00
bytes of the first page in the block
with FFh
2003-03-25 31/34
MAX
2048
UNIT
Block