TC58DVM82A1FT00 Toshiba, TC58DVM82A1FT00 Datasheet - Page 32

• Manufacturer Part Number: TC58DVM82A1FT00
• Manufacturer: Toshiba

Specifications of TC58DVM82A1FT00

• Cell Type: NAND
• Density: 256Mb
• Access Time (max): 35ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 25b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 32M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

(15)
(15) Do not turn off the power before write/erase operation is complete. Avoid using the device when the battery is
low. Power shortage and/or power failure before write/erase operation is complete will cause loss of data and/or
damage to data.
Failure phenomena for Program and Erase operations
The following possible failure modes should be considered when implementing a highly reliable system.
Block
Page
Single Bit
•
•
The device may fail during a Program or Erase operation.
ECC: Error Correction Code
Block Replacement
Program
Erase
When an error occurs in an Erase operation, prevent future accesses to this bad block
(again by creating a table within the system or by using another appropriate scheme).
memory
FAILURE MODE
Buffer
Erase Failure
Programming
Failure
Programming
Failure
1 → 0
Error occurs
Status Read after Erase → Block Replacement
Status Read after Program → Block Replacement
(1) Block Verify after Program → Retry
(2) ECC
Figure 28.
DETECTION AND COUNTERMEASURE SEQUENCE
Block A
Block B
reprogram the data into another Block (Block B)
by loading from an external buffer. Then,
prevent further system accesses to Block A (by
creating a bad block table or by using an
another appropriate scheme).
When an error happens in Block A, try to
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