TC58DVM82A1FT00 Toshiba, TC58DVM82A1FT00 Datasheet - Page 4

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TC58DVM82A1FT00

Manufacturer Part Number
TC58DVM82A1FT00
Description
Manufacturer
Toshiba
Datasheet

Specifications of TC58DVM82A1FT00

Cell Type
NAND
Density
256Mb
Access Time (max)
35ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
25b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
TSOP-I
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
32M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC58DVM82A1FT00
Manufacturer:
TOSHIBA
Quantity:
3 340
Part Number:
TC58DVM82A1FT00
Manufacturer:
TOSHIBA
Quantity:
3 340
AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta = 0° to 70°C, V
AC TEST CONDITIONS
Input level
Input pulse rise and fall time
Input comparison level
Output data comparison level
Output load
SYMBOL
t
t
t
t
REAID
t
t
tCEH
t
t
t
t
t
RSTO
CSTO
t
t
t
t
t
t
ALEA
t
t
WHC
WHR
t
t
t
t
CLH
t
t
t
t
t
t
t
REA
CEA
t
RHZ
CHZ
REH
t
CRY
RST
CLS
ALS
ALH
WW
AR2
WP
WC
WH
WB
CH
DH
RR
RC
OH
t
CS
DS
RP
t
RB
IR
R
CLE Setup Time
CLE Hold Time
Write Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
Ready to RE Falling Edge
Read Pulse Width
Read Cycle Time
ALE Access Time (ID Read)
Data Output Hold Time
Output-High-impedance-to- RE Falling Edge
Memory Cell Array to Starting Address
ALE Low to RE Low (Read Cycle)
Device Reset Time (Read/Program/Erase)
RE Access Time (Serial Data Access)
RE Access Time (ID Read)
RE High to Output High Impedance
RE High Hold Time
RE Access Time (Status Read)
RE Last Clock Rising Edge to Busy (in Sequential Read)
CE Setup Time
CE Hold Time
WE High Hold Time
WP High to WE Low
CE Access Time (Serial Data Access,ID Read)
CE High Time For Last Address in Serial Read Cycle
CE High to Output High Impedance
CE Access Time (Status Read)
WE High to CE Low
WE High to RE Low
WE High to Busy
CE High to Ready (When interrupted by CE in Read Mode)
PARAMETER
CC
= 2.7 V to 3.6 V)
PARAMETER
C
L
(100 pF) + 1 TTL
CONDITION
MIN
100
100
2.4 V, 0.4 V
1.5 V, 1.5 V
1.5 V, 1.5 V
10
10
25
10
20
50
15
20
35
50
10
15
30
30
50
10
0
0
0
0
3 ns
t
r
TC58DVM82A1FT00
6/10/500
(
MAX
RY
200
200
1 +
35
45
45
35
30
20
35
45
25
/
BY
)
2003-03-25 4/34
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
µs
µs
NOTES
(1)(2)
(2)

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