TC58DVM82A1FT00 Toshiba, TC58DVM82A1FT00 Datasheet - Page 5

• Manufacturer Part Number: TC58DVM82A1FT00
• Manufacturer: Toshiba

Specifications of TC58DVM82A1FT00

• Cell Type: NAND
• Density: 256Mb
• Access Time (max): 35ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 25b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 32M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

PROGRAMMING AND ERASING CHARACTERISTICS
(Ta =0° to 70°C, V
RY
Note: (1) CE High to Ready time depends on the pull-up resistor tied to the
t
N
t
(1): Refer to Application Note (12) toward the end of this document.
PROG
BERASE
/
RE
CE
BY
SYMBOL
(2) Sequential Read is terminated when t
(Refer to Application Note (9) toward the end of this document.)
is less than 30 ns,
Programming Time
Number of Programming Cycles on Same
Page
Block Erasing Time
525
CC
= 2.7 V to 3.6 V)
PARAMETER
RY
526
/
BY
signal stays Ready.
527
CEH
is greater than or equal to 100 ns. If the RE to CE delay
A
MIN



2.5
t
CEH
Busy
≥ 100 ns
TYP.
200

2
A
: 0 to 30 ns → Busy signal is not output.
RY
1000
MAX
*
10
3
TC58DVM82A1FT00
/
BY
pin.
* : V
2003-03-25 5/34
UNIT
ms
IH
µ s
or V
IL
NOTES
(1)