TE28F640J3D75

Manufacturer Part NumberTE28F640J3D75
ManufacturerIntel
TE28F640J3D75 datasheet
 

Specifications of TE28F640J3D75

Cell TypeNORDensity64Mb
Access Time (max)75nsInterface TypeParallel
Boot TypeNot RequiredAddress Bus23/22Bit
Operating Supply Voltage (typ)3/3.3VSync/asyncAsynchronous
Package TypeTSOPProgram/erase Volt (typ)2.7 to 3.6V
Operating Temp Range-40C to 85COperating Temperature ClassificationIndustrial
Operating Supply Voltage (min)2.7VOperating Supply Voltage (max)3.6V
Word Size8/16BitNumber Of Words8M/4Mword
MountingSurface MountPin Count56
Lead Free Status / Rohs StatusNot Compliant  
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2.1
Block Diagram
Figure 1:
Memory Block Diagram (32, 64 and 128 Mbit)
V
CCQ
A
- A
0
2
32-Mbit: A
- A
Y-Decoder
0
21
64-Mbit: A
- A
Input Buffer
0
22
128-Mbit: A
- A
0
23
Address
Latch
X-Decoder
Address
Counter
Figure 2:
Numonyx™ Embedded Flash Memory (J3 v. D) Memory Block Diagram (256
Mbit)
CE#
A[23-A0]
Datasheet
10
DQ
- DQ
0
15
Output
Input Buffer
Buffer
Query
Identifier
Register
Status
Register
Multiplexer
Data
Comparator
Y-Gating
32-Mbit: Thirty-two
64-Mbit: Sixty-four
128-Mbit: One-hundred
twenty -eight
128-Kbyte Blocks
Vcc
28F128J3
CE1
Upper Address
CE0 Device
D[15-0]
A[23-A0]
CE2
28F128J3
CE1
Lower Address
CE0 Device
D[15-0]
A[23-A0]
CE2
Numonyx™ Embedded Flash Memory (J3 v. D)
I/O Logic
CE
Logic
Command
User
Interface
Write State
Program/Erase
Machine
Voltage Switch
A24
D[15-0]
November 2007
V
CC
BYTE#
CE
0
CE
1
CE
2
WE#
OE#
RP#
STS
V
PEN
V
CC
GND
308551-05