TE28F640J3D75

Manufacturer Part NumberTE28F640J3D75
ManufacturerIntel
TE28F640J3D75 datasheet
 


Specifications of TE28F640J3D75

Cell TypeNORDensity64Mb
Access Time (max)75nsInterface TypeParallel
Boot TypeNot RequiredAddress Bus23/22Bit
Operating Supply Voltage (typ)3/3.3VSync/asyncAsynchronous
Package TypeTSOPProgram/erase Volt (typ)2.7 to 3.6V
Operating Temp Range-40C to 85COperating Temperature ClassificationIndustrial
Operating Supply Voltage (min)2.7VOperating Supply Voltage (max)3.6V
Word Size8/16BitNumber Of Words8M/4Mword
MountingSurface MountPin Count56
Lead Free Status / Rohs StatusNot Compliant  
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Table 10: Read Operations (Sheet 2 of 2)
Asynchronous Specifications V
#
Sym
Parameter
R2
t
Address to Output Delay
AVQV
R3
t
CE
to Output Delay
X
ELQV
R4
t
OE# to Non-Array Output Delay
GLQV
R5
t
RP# High to Output Delay
PHQV
R6
t
CE
to Output in Low Z
X
ELQX
R7
t
OE# to Output in Low Z
GLQX
R8
t
CE
High to Output in High Z
X
EHQZ
R9
t
OE# High to Output in High Z
GHQZ
Output Hold from Address, CE
R10
t
OH
Change, Whichever Occurs First
R11
t
t
CE
Low to BYTE# High or Low
X
ELFL/
ELFH
R12
t
t
BYTE# to Output Delay
FLQV/
FHQV
R13
t
BYTE# to Output in High Z
FLQZ
R14
t
CEx High to CEx Low
EHEL
R15
t
Page Address Access Time
APA
R16
t
OE# to Array Output Delay
GLQV
Notes:
1.
CE
low is defined as the first edge of CE0, CE1, CE2 or CE# that enables the device. CE
X
of CE0, CE1, CE2 or CE# that disables the device.
2.
See AC Input/Output Reference Waveforms for the maximum allowable input slew rate.
3.
OE# may be delayed up to t
ELQV
on t
.
ELQV
Figure 17, “AC Input/Output Reference Waveform” on page 30
4.
See
Equivalent Testing Load Circuit” on page 30
5.
Sampled, not 100% tested.
6.
For devices configured to standard word/byte read mode, R15 (t
Datasheet
24
Numonyx™ Embedded Flash Memory (J3 v. D)
(3)
= 2.7 V–3.6 V
and V
CC
Density
32 Mbit
64 Mbit
128 Mbit
256 Mbit
32 Mbit
64 Mbit
128 Mbit
256 Mbit
32 Mbit
64 Mbit
128 Mbit
256 Mbit
All
, or OE#
X
All
All
-t
after the first edge of CE0, CE1, CE2 or CE# that enables the device without impact
GLQV
for testing characteristics.
) will equal R2 (t
APA
(3)
= 2.7 V–3.6 V
CCQ
Min
Max
Unit
Notes
75
1,2
75
1,2
ns
75
1,2
95
1,2
75
1,2
75
1,2
ns
75
1,2
95
1,2
25
ns
1,2,4
150
1,2
180
1,2
ns
210
1,2
210
1,2
0
ns
1,2,5
0
ns
1,2,5
25
ns
1,2,5
15
ns
1,2,5
0
ns
1,2,5
10
ns
1,2,5
1
µs
1,2
1
µs
1,2,5
0
ns
1,2,5
25
ns
5, 6
25
ns
1,2,4
high is defined at the first edge
X
Figure 18, “Transient
and
).
AVQV
November 2007
308551-05