TE28F640J3D75

Manufacturer Part NumberTE28F640J3D75
ManufacturerIntel
TE28F640J3D75 datasheet
 


Specifications of TE28F640J3D75

Cell TypeNORDensity64Mb
Access Time (max)75nsInterface TypeParallel
Boot TypeNot RequiredAddress Bus23/22Bit
Operating Supply Voltage (typ)3/3.3VSync/asyncAsynchronous
Package TypeTSOPProgram/erase Volt (typ)2.7 to 3.6V
Operating Temp Range-40C to 85COperating Temperature ClassificationIndustrial
Operating Supply Voltage (min)2.7VOperating Supply Voltage (max)3.6V
Word Size8/16BitNumber Of Words8M/4Mword
MountingSurface MountPin Count56
Lead Free Status / Rohs StatusNot Compliant  
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Numonyx™ Embedded Flash Memory (J3 v. D)
Figure 25: Block Erase Flowchart
Start
Issue Single Block Erase
Command 20H, Block
Address
Write Confirm D0H
Block Address
Read
Status Register
0
SR.7 =
1
Full Status
Check if Desired
Erase Flash
Block(s) Complete
November 2007
308551-05
Bus
Operation
Write
Write (Note 1)
Read
Standby
1. The Erase Confirm byte must follow Erase Setup.
This device does not support erase queuing. Please see
Application note AP-646 For software erase queuing
compatibility.
Full status check can be done after all erase and write
sequences complete. Write FFH after the last operation to
No
reset the device to read array mode.
Suspend
Erase Loop
Yes
Suspend Erase
Command
Comments
Data = 20H
Erase Block
Addr = Block Address
Erase
Data = D0H
Confirm
Addr = Block Address
Status register data
With the device enabled,
OE# low updates SR
Addr = X
Check SR.7
1 = WSM Ready
0 = WSM Busy
Datasheet
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