71V2558S133PF IDT, Integrated Device Technology Inc, 71V2558S133PF Datasheet - Page 6

• Manufacturer Part Number: 71V2558S133PF
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of 71V2558S133PF

• Density: 4.5Mb
• Access Time (max): 4.2ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 133MHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 18b
• Package Type: TQFP
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 300mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.465V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 100
• Word Size: 18b
• Number Of Words: 256K
• Lead Free Status / Rohs Status: Not Compliant

V
V
Pin Configuration — 256K x 18
NOTES:
1. Pins 14, 16 and 66 do not have to be connected directly to V
2. Pins 83 and 84 are reserved for future 8M and 16M respectively.
3. Pin 64 does not have to be connected directly to V
V
V
V
V
165 fBGA Capacitance
(T
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
I/O
I/O
I/O
I/O
I/O
I/O
I/O
100 TQFP Capacitance
(T
DD
DD
I/O
I/O
V
DDQ
V
V
DDQ
V
DDQ
V
V
DDQ
IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs
NC
NC
NC
NC
NC
NC
NC
NC
NC
DD
Symbol
SS
SS
SS
SS
SS
Symbol
P2
10
11
12
13
14
15
(1)
(1)
8
9
voltage is ≤ V
mode).
A
A
as the input voltage is ≥ V
C
C
C
C
I/O
I/O
= +25° C, f = 1.0MHz)
IN
IN
= +25° C, f = 1.0MHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 99 98 97 96 95 94 93 92 91 90
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Input Capacitance
I/O Capacitance
Input Capacitance
I/O Capacitance
IL
; on the latest die revision this pin supports ZZ (sleep
Parameter
Parameter
Top View
IH
(1)
.
(1)
TQFP
89 88
V
V
Conditions
Conditions
V
V
OUT
OUT
87 86 85 84 83 82 81
IN
IN
(1)
= 3dV
= 3dV
(1)
= 3dV
= 3dV
SS
as long as the input
DD
Max.
Max.
TBD
TBD
5
7
as long
80
79
78
77
76
75
74
73
71
69
67
66
65
64
62
61
60
59
58
57
56
54
53
52
72
70
68
63
55
51
4875 drw 02a
4875 tbl 07b
4875 tbl 07
Unit
Unit
pF
pF
pF
pF
NC
NC
V
NC
I/O
I/O
I/O
I/O
I/O
V
V
V
V
I/O
I/O
NC
NC
A
V
V
V
V
V
I/O
I/O
V
V
NC
NC
NC
DDQ
SS
SS
DDQ
SS
DD
DD
DDQ
SS
SS
DDQ
10
SS/ZZ
P1
7
6
5
4
1
0
3
2
(1)
6.42
(3)
6
,
Absolute Maximum Ratings
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
2. V
3. V
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supply has
7. T
119 BGA Capacitance
(T
P
I
V
V
V
V
T
T
T
OUT
Symbol
A
BIAS
STG
T
TERM
TERM
TERM
TERM
(7)
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any input or I/O pin cannot exceed V
supply ramp up.
A
Symbol
C
C
A
DD
DDQ
I/O
IN
= +25° C, f = 1.0MHz)
is the "instant on" case temperature.
(2)
(3,6)
(4,6)
(5,6)
terminals only.
terminals only.
Input Capacitance
I/O Capacitance
Respect to GND
Respect to GND
Respect to GND
Respect to GND
Commerical
Operating Temperature
Industrial
Operating Temperature
Under Bias
Storage
Power Dissipation
DC Output Current
Terminal Voltage with
Terminal Voltage with
Terminal Voltage with
Terminal Voltage with
Temperature
Temperature
Commercial and Industrial Temperature Ranges
Parameter
Rating
(1)
V
Conditions
V
OUT
Industrial Values
-0.5 to V
IN
-0.5 to V
Commercial &
(1)
= 3dV
-0.5 to +4.6
-55 to +125
-55 to +125
-0.5 to V
= 3dV
-40 to +85
-0 to +70
2.0
50
DDQ
DD
(1)
DD
+0.5
+0.5
DDQ
Max.
7
7
during power
4875 tbl 07a
4875 tbl 06
Unit
mA
Unit
o
o
o
o
V
V
V
V
W
pF
pF
C
C
C
C