AM29F010A-45JC AMD (ADVANCED MICRO DEVICES), AM29F010A-45JC Datasheet

no-image

AM29F010A-45JC

Manufacturer Part Number
AM29F010A-45JC
Description
Manufacturer
AMD (ADVANCED MICRO DEVICES)
Datasheet

Specifications of AM29F010A-45JC

Lead Free Status / Rohs Status
Not Compliant
Am29F010A
1 Megabit (128 K x 8-bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Single power supply operation
— 5.0 V ± 10% for read, erase, and program operations
— Simplifies system-level power requirements
Manufactured on 0.55 µm process technology
— Compatible with 0.85 µm Am29F010 device
High performance
— 45 ns maximum access time
Low power consumption
— 20 mA typical active read current
— 30 mA typical program/erase current
— <1 µA typical standby current
Flexible sector architecture
— Eight uniform sectors
— Any combination of sectors can be erased
— Supports full chip erase
Sector protection
— Hardware-based feature that disables/re-
— Sector protection/unprotection can be
enables program and erase operations in any
combination of sectors
implemented using standard PROM
programming equipment
Embedded Algorithms
— Embedded Erase algorithm automatically
— Embedded Program algorithm automatically
Erase Suspend/Resume
— Supports reading data from a sector not
Minimum 100,000 program/erase cycles
guaranteed
20-year data retention at 125 C
— Reliable operation for the life of the system
Package options
— 32-pin PLCC
— 32-pin TSOP
Compatible with JEDEC standards
— Pinout and software compatible with
— Superior inadvertent write protection
Data# Polling and Toggle Bits
— Provides a software method of detecting
pre-programs and erases the chip or any
combination of designated sector
programs and verifies data at specified address
being erased
single-power-supply flash
program or erase cycle completion
Publication# 22181
Issue Date: March 23, 1999
Rev: B Amendment/+1

Related parts for AM29F010A-45JC

AM29F010A-45JC Summary of contents

Page 1

... Am29F010A 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements Manufactured on 0.55 µm process technology — Compatible with 0.85 µm Am29F010 device High performance — ...

Page 2

... GENERAL DESCRIPTION The Am29F010A Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes. The Am29F010A is offered in 32-pin PLCC and TSOP packages. The byte-wide data appears on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt V supply. A 12.0 volt V CC for program or erase operations ...

Page 3

... Command Register CE# OE# V Detector CC A0–A16 -45 - Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29F010A Am29F010A -70 -90 -120 70 90 120 70 90 120 – DQ0 DQ7 Input/Output Buffers Data STB Latch Y-Gating Cell Matrix 22181B-1 3 ...

Page 4

... DQ7 4 DQ6 5 DQ5 6 DQ4 7 DQ3 DQ2 10 DQ1 11 DQ0 PLCC DQ0 22181B-2 Standard TSOP Reverse TSOP Am29F010A A14 A13 A8 A9 A11 OE# A10 CE# DQ7 32 OE# 31 A10 30 CE# 29 DQ7 28 DQ6 27 DQ5 26 DQ4 25 DQ3 DQ2 22 DQ1 21 DQ0 22181B-3 32 A11 A13 28 A14 WE A16 22 A15 21 A12 20 A7 ...

Page 5

... DQ0–DQ7 = 8 Data Inputs/Outputs CE# = Chip Enable OE# = Output Enable WE# = Write Enable = +5.0 Volt Single Power Supply V CC (See Product Selector Guide for speed options and voltage supply tolerances Device Ground Pin Not Connected Internally LOGIC SYMBOL 17 A0–A16 CE# OE# WE# Am29F010A 8 DQ0–DQ7 22181B-5 5 ...

Page 6

... Megabit (128 K x 8-Bit) CMOS Flash Memory 5.0 Volt-only Program and Erase Valid Combinations AM29F010A-45 EC, EI, EE, AM29F010A-55 JC, JI, JE, EC, EI, EE, FC, FI 5.0 V ± 10% CC AM29F010A-70 AM29F010A-90 EC, EI, EE, AM29F010A-120 6 OPTIONAL PROCESSING Blank = Standard Processing B = Burn-In (Contact an AMD representative for more information) TEMPERATURE RANGE ...

Page 7

... The command register itself does not occupy any addressable memory location. The register is composed of latches that store the com- mands, along with the address and data information needed to execute the command. The contents of the Table 1. Am29F010A Device Bus Operations Operation Read Write Standby ...

Page 8

... When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, inde- pendent of the OE# input. Table 2. Am29F010A Sector Addresses Table Sector A16 SA0 0 ...

Page 9

... Table 3. Am29F010A Autoselect Codes (High Voltage Method) Description CE# Manufacturer ID: AMD L Device ID: Am29F010A L Sector Protection Verification Logic Low = Logic High = V IL Sector Protection/Unprotection The hardware sector protection feature disables both program and erase operations in any sector. The hard- ware sector unprotection feature re-enables both program and erase operations in previously protected sectors ...

Page 10

... Attempting may halt the operation and set DQ5 to “1”, or cause the Data# Polling algorithm to indicate the operation was suc- cessful. However, a succeeding read will show that the data is still “0”. Only erase operations can convert a “0” “1”. Am29F010A ...

Page 11

... Once the sector erase operation has begun, all other commands are ignored. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. The system can determine the sta- tus of the erase operation by using DQ7 or DQ6. Refer Am29F010A 11 ...

Page 12

... Write Erase Command Sequence Data Poll from System No Data = FFh? Yes Erasure Completed Notes: 1. See the appropriate Command Definitions table for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 2. Erase Operation Am29F010A Embedded Erase algorithm in progress 22181B-7 ...

Page 13

... Table 4. Am29F010A Command Definitions Command Sequence (Note 1) Read (Note 4) Reset (Note 5) Reset (Note 6) Manufacturer ID Device ID Autoselect (Note 7) Sector Protect Verify (Note 8) Program Chip Erase Sector Erase Erase Suspend (Note 9) Erase Resume (Note 10) Legend Don’t care RA = Address of the memory location to be read. ...

Page 14

... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 3. Data# Polling Algorithm Am29F010A Yes Yes PASS 22181B-8 ...

Page 15

... DQ5 through successive read cycles, de- termining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to de- termine the status of the operation (top of Figure 4). Am29F010A (Note 1) No (Notes ...

Page 16

... If DQ3 is high on the second status check, the last com- mand might not have been accepted. Table 5 shows the outputs for DQ3. Table 5. Write Operation Status DQ7 (Note 1) DQ7 Data Am29F010A DQ5 DQ6 (Note 2) DQ3 Toggle 0 N/A Toggle 0 1 ...

Page 17

... Ambient Temperature (T V Supply Voltages CC V for ±5% devices . . . . . . . . . . . +4. +5. for ±10% devices +4. +5. Operating ranges define those limits between which the to –2.0 V functionality of the device is guaranteed 0.5 V. During to –2 +2 +0.5 V 2.0 V 22181B-10 Figure 6. Maximum Positive Overshoot Am29F010A ) . . . . . . . . . . . + .– + .– +125 22181B-11 Waveform 17 ...

Page 18

... CC 4. Not 100% tested. 18 Test Description Max Max 12 Max OUT CE OE IL IL, IH CE# and Min –2.5 mA Min max Am29F010A Min Typ Max Unit 1.0 µA 50 µA 1.0 µ 0.4 1.0 mA –0.5 0 10.5 12.5 V 0.45 V 2.4 V 3.2 4.2 V ...

Page 19

... CC3 Test Description Max Max 12 Max OUT OE IL IL 0 Min –2.5 mA Min –100 µ Min max Am29F010A Min Typ Max Unit 1.0 µA 50 µA 1.0 µ µA –0.5 0 10.5 12.5 V 0. – 0 3.2 4 ...

Page 20

... Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels 22181B-12 INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Am29F010A -45 All others Unit 1 TTL gate L 30 100 0.0–3.0 0.45–2 ...

Page 21

... Outputs Test Setup Min CE Max OE OE Max IL Max Max Max Read Min Toggle and Data Min Polling Min t RC Addresses Stable t ACC OEH t CE HIGH Z Output Valid Figure 8. Read Operations Timings Am29F010A Speed Options -45 -55 -70 -90 -120 Unit 120 120 120 ...

Page 22

... Set Up Time (Note 1) VCS CC Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more informaiton. 22 Parameter Description Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min Am29F010A Speed Options -45 -55 -70 -90 -120 120 ...

Page 23

... DH PD A0h is the true data at the program address. OUT Figure 9. Program Operation Timings 555h for chip erase WPH 55h 30h 10 for Chip Erase Am29F010A Read Status Data (last two cycles WHWH1 D Status OUT 22181B-14 Read Status Data WHWH2 In Complete Progress 22181B-15 23 ...

Page 24

... Figure 12. Toggle Bit Timings (During Embedded Algorithms Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29F010A VA High Z Valid Data True High Z True Valid Data 22181B- Valid Status Valid Data (stops toggling) 22181B-17 ...

Page 25

... Chip/Sector Erase Operation (Note 2) WHWH2 WHWH2 Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Parameter Description Min Min Min Min Min Min Min Min Min Min Min Typ Typ Am29F010A Speed Options -45 -55 -70 -90 -120 120 ...

Page 26

... A0 for program PD for program 55 for erase 30 for sector erase 10 for chip erase Limits Typ (Note 1) Max (Note 2) 1 300 0.9 6.25 Am29F010A PA DQ7# D OUT = Array Data. OUT 22181B-18 Unit Comments Excludes 00h programming prior to sec erasure (Note 4) µs Excludes system-level overhead ...

Page 27

... DATA RETENTION Parameter Description Minimum Pattern Data Retention Time –1.0 V –100 mA = 5.0 Volt, one pin at a time. CC Test Conditions OUT Test Conditions OUT Test Conditions C 150 125 C Am29F010A Min Max +100 mA Typ Max Unit 6 7 Typ Max Unit Min ...

Page 28

... SEATING PLANE .015 .014 .060 .022 .009 .015 .125 .140 .080 .095 SEATING PLANE .013 .021 .050 REF. Am29F010A .600 .625 .008 .015 .630 .700 0˚ 10˚ 16-038-SB_AG PD 032 DG75 2-28-95 ae .042 .056 .400 REF. .490 .530 16-038FPO-5 PL 032 ...

Page 29

... Standard Thin Small Outline Package (measured in millimeters) Pin 1 I.D. 1 1.20 MAX 0.25MM (0.0098") BSC * For reference only. BSC is an ANSI standard for Basic Space Centering. 18.30 18.50 19.80 20.20 0° 5° Am29F010A 0.95 1.05 7.90 8.10 0.50 BSC 0.05 0.15 0.08 16-038-TSOP-2 0.20 TS 032 DA95 ...

Page 30

... Pin 1 I.D. 1 1.20 MAX 0.25MM (0.0098") BSC * For reference only. BSC is an ANSI standard for Basic Space Centering. 30 18.30 18.50 19.80 20.20 0° 5° 0.50 0.70 Am29F010A 0.95 1.05 7.90 8.10 0.50 BSC 0.05 0.15 16-038-TSOP-2 0.08 TSR032 0.20 DA95 0.10 4-4-95 ae ...

Page 31

... ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. Distinctive Characteristics Added bullet for 20-year data retention Revision B+1 Operating Ranges The temperature ranges are now specified as ambient. Am29F010A 31 ...

Related keywords