LX5510LQ

Manufacturer Part NumberLX5510LQ
ManufacturerMICROSEMI
TypePower Amplifier
LX5510LQ datasheet
 


Specifications of LX5510LQ

Number Of Channels1Frequency (max)2.5GHz
Power Supply RequirementSingleSingle Supply Voltage (typ)3.3V
Package TypeMLPQDual Supply Voltage (min)Not RequiredV
Dual Supply Voltage (typ)Not RequiredVDual Supply Voltage (max)Not RequiredV
Supply Current180@3.3VmAOperating Temperature ClassificationIndustrial
Operating Temp Range-40C to 85CPin Count16
MountingSurface MountLead Free Status / Rohs StatusCompliant
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TM
D E S C R I P T I O N
The LX5510 is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range. The
PA is implemented as a two-stage
monolithic
microwave
integrated
circuit (MMIC) with active bias and
input/output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(HBT)
IC
process
(MOCVD). With single low voltage
supply of 3.3V 20 dB power gain
between
2.4-2.5GHz,
at
a
quiescent current of 65mA.
IMPORTANT: For the most current data, consult MICROSEMI’s website:
Copyright © 2000
Rev. 1.0d 2005-08-18
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
For +19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3.0%, and consumes 125 mA total DC
current with the nominal 3.3V bias.
With increased bias of 5 V EVM is ~
4% at 23 dBm.
The LX5510 is available in a 16-pin
3mmx3mm micro-lead quad package
(MLPQ). The compact footprint, low
profile, and excellent thermal capability
of the MLPQ package makes the
low
LX5510 an ideal solution for medium-
gain power amplifier requirements for
IEEE 802.11b/g applications
http://www.microsemi.com
P R O D U C T H I G H L I G H T
P A C K A G E O R D E R I N F O
Plastic MLPQ
LQ
16 pin
RoHS Compliant / Pb-free Transition DC: 0418
LX5510LQ
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5510LQ-TR)
This device is classified as ESD Level 0 in accordance
with JESD22-A114-B, (HBM) testing.
ESD procedures should be observed when handling
this device.
Microsemi
Integrated Products Division
LX5510
P
D
S
RODUCTION
ATA
HEET
K E Y F E A T U R E S
Advanced InGaP HBT
2.4 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~65mA
Power Gain ~20dB @ 2.45GHz
and Pout = 19dBm
Total Current 125mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3 x 3 mm
Low Profile (0.9mm)
A P P L I C A T I O N S
IEEE 802.11b/g
Appropriate
2
)
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LX5510LQ Summary of contents

  • Page 1

    ... RoHS Compliant / Pb-free Transition DC: 0418 LX5510LQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5510LQ-TR) This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM) testing. ESD procedures should be observed when handling this device. ...

  • Page 2

    ... Rev. 1.0d 2005-08-18 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier θ C 10°C/W ASE JC , θ A 50°C/W MBIENT Description Microsemi Integrated Products Division LX5510 D S RODUCTION ATA HEET VC2 N OUT 2 ...

  • Page 3

    ... Iref For Icq = 65mA S21 ΔS21 Over 100MHz ΔS21 0°C to +70°C S11 S22 S12 Pout = 19dBm Pout = 19dbm 11 Mbps CCK 11 Mbps CCK 90% ON Microsemi Integrated Products Division LX5510 D S RODUCTION ATA HEET LX5510 Units Min Typ Max 2.4 2.5 20 3.0 ...

  • Page 4

    ... Vref = 2.85V, Icq = 65mA, frequency=2.45 GHz, P1dB=25 dBm) 2.5 GHz -45 -47.5 -50 -52.5 -55 -57.5 - Figure 4 – ACP Data with 54MB/s 64 QAM OFDM -10 -20 -30 -40 -50 2.0 Microsemi Integrated Products Division LX5510 RODUCTION ATA HEET output power gain current 400 350 300 250 200 150 100 50 0 -20 -15 - ...

  • Page 5

    ... Figure 8 – EVM Data with 54Mb/s 64QAM OFDM 2.5 GHZ Figure 10 – Spectrum with 25dBm 11Mb/s CCK (Vc = 5V, Vref = 2.85V, Icq = 80mA 214mA, Frequency = 2.45GHz) Microsemi Integrated Products Division LX5510 D S ATA HEET 2.4 GHz 2.45 GHz 2.5 GHz Output Power /[dBm] (Vc = 5V, Vref = 2 ...

  • Page 6

    ... InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION Location C4,C5 L1, TL1 TL2 TL3 Substrate Microsemi Integrated Products Division LX5510 D S ATA HEET Recommended BOM Value 2.2 pF (0402) 2.4 pF (0402) 3.3 pF (0402 (0603) 8.2 nH(0402) 350 Ω (0402) 200 Ω (0402) ...

  • Page 7

    ... solder coverage. 2. Due to multiple qualified assembly sub-contractors either package (with different pin one indicators) may be shipped. Package type will be consistent within the smallest individual container Microsemi Integrated Products Division LX5510 D S RODUCTION ATA HEET M I ILLIMETERS NCHES MIN MAX ...

  • Page 8

    ... InGaP HBT 2.4 – 2.5 GHz Power Amplifier Ø 1.50mm 4.00mm 3.30mm 3.30mm Side View 0.30mm 2.2mm Ø 330mm ±0.5 Microsemi Integrated Products Division LX5510 D S RODUCTION ATA HEET Top View 12.00 ± 0.3mm Part Orientation Ø 13mm +1.5 -0.2 10.6mm Ø ...

  • Page 9

    ... TM PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © ...