LX5510LQ MICROSEMI, LX5510LQ Datasheet

LX5510LQ

Manufacturer Part Number

LX5510LQ

Description

Manufacturer

MICROSEMI

Type

Power Amplifierr

Datasheet

1.LX5510LQ.pdf (9 pages)

Specifications of LX5510LQ

Number Of Channels

Frequency (max)

2.5GHz

Power Supply Requirement

Single

Single Supply Voltage (typ)

3.3V

Package Type

MLPQ

Dual Supply Voltage (min)

Not RequiredV

Dual Supply Voltage (typ)

Not RequiredV

Dual Supply Voltage (max)

Not RequiredV

Supply Current

180@3.3VmA

Operating Temperature Classification

Industrial

Operating Temp Range

-40C to 85C

Pin Count

Mounting

Surface Mount

Lead Free Status / Rohs Status

Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

LX5510LQ

Manufacturer:

MICROS

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

LX5510LQTR

Manufacturer:

YEONHO

Quantity:

1 175

Current page: 1 of 9
Download datasheet (328Kb)

Rev. 1.0d 2005-08-18

optimized for WLAN applications in

the 2.4-2.5 GHz frequency range. The

PA is implemented as a two-stage

monolithic

circuit (MMIC) with active bias and

input/output pre-matching.

InGaP/GaAs Heterojunction Bipolar

Transistor

(MOCVD). With single low voltage

supply of 3.3V 20 dB power gain

between

quiescent current of 65mA.

IMPORTANT: For the most current data, consult MICROSEMI’s website:

The LX5510 is a power amplifier

The device is manufactured with an

2.4-2.5GHz,

(HBT)

microwave

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

integrated

D E S C R I P T I O N

process

low

(64QAM, 54Mbps), the PA provides a

low EVM (Error-Vector Magnitude) of

3.0%, and consumes 125 mA total DC

current with the nominal 3.3V bias.

With increased bias of 5 V EVM is ~

4% at 23 dBm.

3mmx3mm micro-lead quad package

(MLPQ). The compact footprint, low

profile, and excellent thermal capability

of the MLPQ package makes the

LX5510 an ideal solution for medium-

gain power amplifier requirements for

IEEE 802.11b/g applications

This device is classified as ESD Level 0 in accordance

RoHS Compliant / Pb-free Transition DC: 0418

with JESD22-A114-B, (HBM) testing.

ESD procedures should be observed when handling

this device.

Note: Available in Tape & Reel. Append the letters

For +19dBm OFDM output power

The LX5510 is available in a 16-pin

P R O D U C T H I G H L I G H T

P A C K A G E O R D E R I N F O

“TR” to the part number. (i.e. LX5510LQ-TR)

Integrated Products Division

Plastic MLPQ

16 pin

Microsemi

http://www.microsemi.com

LX5510LQ

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

Appropriate

RODUCTION

Advanced InGaP HBT

2.4 – 2.5GHz Operation

Single-Polarity 3.3V Supply

Low Quiescent Current Icq

~65mA

Power Gain ~20dB @ 2.45GHz

and Pout = 19dBm

Total Current 125mA for Pout =

19dBm @ 2.45GHz OFDM

EVM ~ 3.0% for 64QAM /

54Mbps and Pout = 19dBm

Small Footprint (3 x 3 mm

Low Profile (0.9mm)

IEEE 802.11b/g

ATA

K E Y F E A T U R E S

A P P L I C A T I O N S

HEET

LX5510

)

Page 1

Related parts for LX5510LQ

LX5510LQ Summary of contents

Page 1

... RoHS Compliant / Pb-free Transition DC: 0418 LX5510LQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5510LQ-TR) This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM) testing. ESD procedures should be observed when handling this device. ...

Page 2

... Rev. 1.0d 2005-08-18 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier θ C 10°C/W ASE JC , θ A 50°C/W MBIENT Description Microsemi Integrated Products Division LX5510 D S RODUCTION ATA HEET VC2 N OUT 2 ...

Page 3

... Iref For Icq = 65mA S21 ΔS21 Over 100MHz ΔS21 0°C to +70°C S11 S22 S12 Pout = 19dBm Pout = 19dbm 11 Mbps CCK 11 Mbps CCK 90% ON Microsemi Integrated Products Division LX5510 D S RODUCTION ATA HEET LX5510 Units Min Typ Max 2.4 2.5 20 3.0 ...

Page 4

... Vref = 2.85V, Icq = 65mA, frequency=2.45 GHz, P1dB=25 dBm) 2.5 GHz -45 -47.5 -50 -52.5 -55 -57.5 - Figure 4 – ACP Data with 54MB/s 64 QAM OFDM -10 -20 -30 -40 -50 2.0 Microsemi Integrated Products Division LX5510 RODUCTION ATA HEET output power gain current 400 350 300 250 200 150 100 50 0 -20 -15 - ...

Page 5

... Figure 8 – EVM Data with 54Mb/s 64QAM OFDM 2.5 GHZ Figure 10 – Spectrum with 25dBm 11Mb/s CCK (Vc = 5V, Vref = 2.85V, Icq = 80mA 214mA, Frequency = 2.45GHz) Microsemi Integrated Products Division LX5510 D S ATA HEET 2.4 GHz 2.45 GHz 2.5 GHz Output Power /[dBm] (Vc = 5V, Vref = 2 ...

Page 6

... InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION Location C4,C5 L1, TL1 TL2 TL3 Substrate Microsemi Integrated Products Division LX5510 D S ATA HEET Recommended BOM Value 2.2 pF (0402) 2.4 pF (0402) 3.3 pF (0402 (0603) 8.2 nH(0402) 350 Ω (0402) 200 Ω (0402) ...

Page 7

... solder coverage. 2. Due to multiple qualified assembly sub-contractors either package (with different pin one indicators) may be shipped. Package type will be consistent within the smallest individual container Microsemi Integrated Products Division LX5510 D S RODUCTION ATA HEET M I ILLIMETERS NCHES MIN MAX ...

Page 8

... InGaP HBT 2.4 – 2.5 GHz Power Amplifier Ø 1.50mm 4.00mm 3.30mm 3.30mm Side View 0.30mm 2.2mm Ø 330mm ±0.5 Microsemi Integrated Products Division LX5510 D S RODUCTION ATA HEET Top View 12.00 ± 0.3mm Part Orientation Ø 13mm +1.5 -0.2 10.6mm Ø ...

Page 9

... TM PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © ...

Related keywords

LX5510LQ datasheet
LX5510LQ data sheet
LX5510LQ pdf datasheet
LX5510LQ component
LX5510LQ part
LX5510LQ distributor
LX5510LQ RoHS
LX5510LQ datasheet download