LX5510LQ MICROSEMI, LX5510LQ Datasheet - Page 3

• Manufacturer Part Number: LX5510LQ
• Manufacturer: MICROSEMI
• Type: Power Amplifierr

Specifications of LX5510LQ

• Number Of Channels: 1
• Frequency (max): 2.5GHz
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 3.3V
• Package Type: MLPQ
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Supply Current: 180@3.3VmA
• Operating Temperature Classification: Industrial
• Operating Temp Range: -40C to 85C
• Pin Count: 16
• Mounting: Surface Mount
• Lead Free Status / Rohs Status: Compliant

Copyright © 2000
Rev. 1.0d 2005-08-18
Test conditions: Vc = 3.3V, Vref = 2.85V, Icq = 65mA, T
Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.
SECTION HEADER
Frequency Range
Power Gain at Pout = 19dBm
EVM at Pout = 19dBm
Total Current at Pout = 19dBm
Quiescent Current
Bias Control Reference Current
Small-Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Third Harmonic
Total Current at Pout=23dBm
2
Ramp-On Time
nd
side lobe at 23 dBm
TM
Parameter
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: [phone]
E L E C T R I C A L C H A R A C T E R I S T I C S
Symbol
Ic_total
ΔS21
ΔS21
S21
S11
S22
S12
Iref
Gp
Icq
t
ON
f
Integrated Products Division
64GQAM / 54Mbps
For Icq = 65mA
Over 100MHz
0°C to +70°C
Pout = 19dBm
Pout = 19dbm
11 Mbps CCK
11 Mbps CCK
10 ~ 90%
®
A
Microsemi
= 25°C, unless otherwise specified
Test Conditions
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P
RODUCTION
D
Min
ATA
2.4
S
LX5510
HEET
Typ
125
180
3.0
1.2
-40
-55
-55
-52
20
65
20
10
10
1
1
Max
100
2.5
LX5510
Units
GHz
dBc
dBc
dBc
mA
mA
mA
mA
dB
dB
dB
dB
dB
dB
dB
ns
%
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