TMD5872-2-321 Toshiba, TMD5872-2-321 Datasheet
TMD5872-2-321
Manufacturer Part Number
TMD5872-2-321
Description
Manufacturer
Toshiba
Type
Power Amplifierr
Datasheet
1.TMD5872-2-321.pdf
(2 pages)
Specifications of TMD5872-2-321
Number Of Channels
1
Power Supply Requirement
Single
Pin Count
10
Mounting
Screw
Lead Free Status / Rohs Status
Not Compliant
ABSOLUTE MAXIMUM RATINGS(Ta=25
RF PERFORMANCE SPECIFICATIONS (Ta=25
u
u
DRAIN SUPPLY VOLTAGE
GATE SUPPLY VOLTAGE
INPUT POWER
FLANGE TEMPERATURE
STORAGE TEMPERATURE
Operaing Frequency
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Gain Flatness
Drain Current
Power Added Efficiency
VSWRin (small signal)
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
n
n
n
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA
for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with
design of equipment incorporating this product.
CHARACTERISTICS
Suitable for VSAT, UNII radio applications
High Power P1dB=31.7dBm(MIN.)
High Power Added Efficiency
CHARACTERISTICS
SYMBOL
VSWRin
G1dB
P1dB
IDD
add
f
G
add=21%(TYP.)
o
C)
CONDITION
SYMBOL
VDD=10V
VGG=-5V
VDD
VGG
Tstg
Pin
Tf
o
C)
MICROWAVE POWER MMIC AMPLIFIER
1
n
n
TMD5872-2-321
High Gain G1dB=26.7dB(MIN.)
Broadband Operation f=5.8-6.475GHz.
UNIT
dBm
GHz
dB
dB
A
%
-
UNIT
dBm
o
o
V
V
C
C
MIN.
31.7
26.7
5.8
-
-
-
-
TYP.
2.0:1
1.2
21
-
-
-
-
RATINGS
-65 - +175
-30 - +80
-10
15
10
+/- 2.0
March. 1999
MAX.
6.475
3.0:1
1.6
-
-
-
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TMD5872-2-321 Summary of contents
Page 1
... TOSHIBA or others. The information contained herein may be changed without prior notice therefore advisable to contact TOSHIBA before proceeding with u design of equipment incorporating this product. MICROWAVE POWER MMIC AMPLIFIER TMD5872-2-321 High Gain G1dB=26.7dB(MIN.) n add=21%(TYP.) Broadband Operation f=5.8-6.475GHz. ...
Page 2
... Package Outline Recommended Bias Configuration 1 – 10- VGG TMD5872-2-321 1,000pF 3pF 2 TMD5872-2-321 Unit in mm •„…†‰Š: No Connection ƒ: RF Input ‚: VGG ‡: VDD ˆ: RF Output : Orientation Tab 11pin 7: VDD 3pF 1,000pF 10- – GND : Base Plate ...