MHL21336 Freescale Semiconductor, MHL21336 Datasheet

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MHL21336

Manufacturer Part Number
MHL21336
Description
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MHL21336

Lead Free Status / Rohs Status
Supplier Unconfirmed

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MHL21336
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MHL21336
Manufacturer:
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 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
3G Band
RF Linear LDMOS Amplifier
the 3G frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital CDMA modulation systems.
• Third Order Intercept: 45 dBm Typ
• Power Gain: 31 dB Typ (@ f = 2140 MHz)
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
Table 1. Absolute Maximum Ratings
Table 2. Electrical Characteristics
Replaced by MHL21336N. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Comp.
Input VSWR
Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz)
Noise Figure
Designed for ultra- linear amplifier applications in
Characteristic
Rating
(V
DD
(T
C
= 26 Vdc, T
= 25°C unless otherwise noted)
(f = 2140 MHz)
(f = 2110 - 2170 MHz)
(f = 2140 MHz)
(f = 2110 - 2170 MHz)
(f = 2170 MHz)
50 ohm system
C
= 25°C; 50 Ω System)
s operating in
P
Symbol
Symbol
VSWR
out
V
ITO
T
I
NF
P
T
G
G
DD
stg
DD
in
C
1 dB
p
F
in
Min
30
34
44
RF LINEAR LDMOS AMPLIFIER
- 40 to +100
- 20 to +100
CASE 301AP - 02, STYLE 1
Value
1.2:1
0.15
MHL21336
Typ
500
4.5
30
+5
31
35
45
2110 - 2170 MHz
3.0 W, 31 dB
1.5:1
Max
525
0.4
32
5
Rev. 4, 1/2005
MHL21336
MHL21336
dBm
dBm
dBm
Unit
Unit
Vdc
mA
°C
°C
dB
dB
dB
1

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MHL21336 Summary of contents

Page 1

... Freescale Semiconductor Technical Data Replaced by MHL21336N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. 3G Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain ...

Page 2

... Figure 3. Power Gain, I versus Temperature DD −1400 −1420 −1440 GROUP DELAY −1460 −1480 −1500 −40 − TEMPERATURE (_C) (1) Figure 5. Phase , Group Delay Temperature 1. In Production Test Fixture MHL21336 2 TYPICAL CHARACTERISTICS Vdc 25_C 2400 2600 2800 1800 Figure 2. P1dB, ITO versus Frequency 600 ...

Page 3

... Figure 10. Phase Linearity, Gain Flatness f = 2140 MHz T = 25_C C P1dB ITO VOLTAGE (VOLTS 2110 − 2170 MHz T = 25_C PHASE LINEARITY VOLTAGE (VOLTS) versus Voltage MHL21336 37 36.5 36 35 0.35 0.3 0.25 0.2 0.15 0.1 0. ...

Page 4

... MHL21336 4 NOTES RF Device Data Freescale Semiconductor ...

Page 5

... RF Device Data Freescale Semiconductor NOTES MHL21336 5 ...

Page 6

... MHL21336 6 NOTES RF Device Data Freescale Semiconductor ...

Page 7

... L 0.990 BSC 25.15 BSC N 0.390 BSC 9.91 BSC P 0.008 0.013 0.20 0.33 Q 0.118 0.132 3.00 3.35 R 0.535 0.555 13.59 14.10 S 0.445 0.465 11.30 11.81 W 0.090 BSC 2.29 BSC STYLE 1: PIN 1. RF INPUT 2. VDD1 3. VDD2 4. RF OUTPUT CASE: GROUND MHL21336 7 ...

Page 8

... Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MHL21336 Document Number: MHL21336 Rev. 4, 1/2005 8 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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