MHL21336 Freescale Semiconductor, MHL21336 Datasheet
MHL21336
Specifications of MHL21336
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MHL21336 Summary of contents
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... Freescale Semiconductor Technical Data Replaced by MHL21336N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. 3G Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain ...
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... Figure 3. Power Gain, I versus Temperature DD −1400 −1420 −1440 GROUP DELAY −1460 −1480 −1500 −40 − TEMPERATURE (_C) (1) Figure 5. Phase , Group Delay Temperature 1. In Production Test Fixture MHL21336 2 TYPICAL CHARACTERISTICS Vdc 25_C 2400 2600 2800 1800 Figure 2. P1dB, ITO versus Frequency 600 ...
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... Figure 10. Phase Linearity, Gain Flatness f = 2140 MHz T = 25_C C P1dB ITO VOLTAGE (VOLTS 2110 − 2170 MHz T = 25_C PHASE LINEARITY VOLTAGE (VOLTS) versus Voltage MHL21336 37 36.5 36 35 0.35 0.3 0.25 0.2 0.15 0.1 0. ...
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... MHL21336 4 NOTES RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor NOTES MHL21336 5 ...
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... MHL21336 6 NOTES RF Device Data Freescale Semiconductor ...
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... L 0.990 BSC 25.15 BSC N 0.390 BSC 9.91 BSC P 0.008 0.013 0.20 0.33 Q 0.118 0.132 3.00 3.35 R 0.535 0.555 13.59 14.10 S 0.445 0.465 11.30 11.81 W 0.090 BSC 2.29 BSC STYLE 1: PIN 1. RF INPUT 2. VDD1 3. VDD2 4. RF OUTPUT CASE: GROUND MHL21336 7 ...
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... Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MHL21336 Document Number: MHL21336 Rev. 4, 1/2005 8 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...