Q62702P3596 OSRAM Opto Semiconductors Inc, Q62702P3596 Datasheet

Q62702P3596

Manufacturer Part Number
Q62702P3596
Description
Manufacturer
OSRAM Opto Semiconductors Inc
Datasheet

Specifications of Q62702P3596

Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
35V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.15V
Dark Current (max)
50nA
Light Current
3400/5400uA
Rise Time
7000/8000ns
Fall Time
7000/8000ns
Power Dissipation
165mW
Peak Wavelength
890nm
Half-intensity Angle
50deg
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
T-1
Lead Free Status / Rohs Status
Compliant
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
Lead (Pb) Free Product - RoHS Compliant
SFH 310
SFH 310 FA
Not for new design (valid till DC0837, additional information see OS-PCN-2006-015-A)
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
• Hohe Linearität
• 3 mm-Plastikbauform
Anwendungen
• Lichtschranken für Gleich- und
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
SFH 310
SFH 310-2/3
SFH 310 FA
SFH 310 FA-2/3
2007-04-03
von 400 nm bis 1100 nm (SFH 310) und bei
880 nm (SFH 310 FA)
Wechsellichtbetrieb
Bestellnummer
Ordering Code
Q62702P0874
Q62702P3595
Q62702P1673
Q62702P3596
SFH 310
1
Features
• Especially suitable for applications from
• High linearity
• 3 mm plastic package
Applications
• Photointerrupters
• Industrial electronics
• For control and drive circuits
400 nm to 1100 nm (SFH 310) and of 880 nm
(SFH 310 FA)
SFH 310 FA

Related parts for Q62702P3596

Q62702P3596 Summary of contents

Page 1

... Type Ordering Code SFH 310 Q62702P0874 SFH 310-2/3 Q62702P3595 SFH 310 FA Q62702P1673 SFH 310 FA-2/3 Q62702P3596 2007-04-03 SFH 310 Features • Especially suitable for applications from 400 nm to 1100 nm (SFH 310) and of 880 nm (SFH 310 FA) • High linearity • plastic package Applications • ...

Page 2

Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 μs Collector surge current = 25 °C T Verlustleistung, A Total power dissipation Wärmewiderstand Thermal resistance 2007-04-03 ...

Page 3

Kennwerte ( T A Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von S max Spectral range of sensitivity 10% ...

Page 4

Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Fotostrom, λ = 950 nm Photocurrent 0.5 mW/cm ...

Page 5

T A Relative Spectral Sensitivity, SFH 310 (λ) rel Total Power Dissipation tot A OHF00871 200 mW P tot 160 120 ...

Page 6

Maßzeichnung Package Outlines Collector Maß (inch) / Dimensions in mm (inch). Lötbedingungen Soldering Conditions Wellenlöten (TTW) TTW Soldering 300 C 250 T 235 C ... 260 C 200 1. Welle 1. wave 150 ca 200 K/s 100 C ...

Page 7

Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due ...

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