MRF372 Freescale Semiconductor, MRF372 Datasheet - Page 6

• Manufacturer Part Number: MRF372
• Manufacturer: Freescale Semiconductor

Specifications of MRF372

• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 17A
• Drain Source Voltage (max): 68V
• Power Gain (typ)@vds: 17dB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: NI-860C3
• Pin Count: 5
• Forward Transconductance (typ): 2.6S
• Input Capacitance (typ)@vds: 260@32VpF
• Output Capacitance (typ)@vds: 69@32VpF
• Reverse Capacitance (typ): 2.5@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 37%
• Mounting: Screw
• Mode Of Operation: 2-Tone
• Power Dissipation (max): 350000mW
• Vswr (max): 3
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

MRF372R3 MRF372R5
6
−10
−15
−20
−25
−30
−35
−40
−45
−50
40
35
30
25
20
15
10
5
V
f1 = 857 MHz
f2 = 863 MHz
DD
Figure 7. Intermodulation Distortion versus
= 32 Vdc
V
I
6 dB Peak/Avg. Ratio
DQ
DD
Figure 5. 8 - VSB Performance (860 MHz)
10
= 1600 mA
= 32 Vdc
Note: IMR measured using Delta Marker Method.
I
DQ
P
out
= 400 mA
P
800 mA
out
, OUTPUT POWER (WATTS) PEP
, OUTPUT POWER (WATTS) AVG.
10
1.2 A
G
Output Power
ps
TYPICAL TWO - TONE NARROWBAND CHARACTERISTICS
1.6 A
35
30
25
20
15
10
IMR
5
0
V
I
2 K Mode 64 QAM
10 dB Peak/Avg. Ratio
100
DQ
h
DD
Figure 4. COFDM Performance (860 MHz)
= 1600 mA
= 32 Vdc
Note: IMR measured using Delta Marker Method.
G
P
ps
out
, OUTPUT POWER (WATTS) AVG.
100
10
−15
−20
−25
−30
−35
−40
−45
−50
IMR
45
40
35
30
25
20
15
10
20
18
16
14
12
10
5
Figure 8. Drain Efficiency versus Output Power
h
800 mA
I
DQ
1.2 A
V
I
f1 = 857 MHz
f2 = 863 MHz
Figure 6. Power Gain versus Output Power
DQ
DD
= 1600 mA
400 mA
= 800 mA
= 32 Vdc
10
10
P
out
P
out
, OUTPUT POWER (WATTS) PEP
100
, OUTPUT POWER (WATTS) PEP
−15
−20
−25
−30
−35
−40
−45
−50
Freescale Semiconductor
100
100
RF Device Data
V
f1 = 857 MHz
f2 = 863 MHz
DD
= 32 Vdc