MRF372 Freescale Semiconductor, MRF372 Datasheet - Page 7

MRF372

Manufacturer Part Number
MRF372
Description
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF372

Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
17A
Drain Source Voltage (max)
68V
Power Gain (typ)@vds
17dB
Frequency (min)
470MHz
Frequency (max)
860MHz
Package Type
NI-860C3
Pin Count
5
Forward Transconductance (typ)
2.6S
Input Capacitance (typ)@vds
260@32VpF
Output Capacitance (typ)@vds
69@32VpF
Reverse Capacitance (typ)
2.5@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
37%
Mounting
Screw
Mode Of Operation
2-Tone
Power Dissipation (max)
350000mW
Vswr (max)
3
Screening Level
Military
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF372
Manufacturer:
SAMSUNG
Quantity:
860 000
Part Number:
MRF372
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
RF Device Data
Freescale Semiconductor
Figure 9. Narrowband Series Equivalent Source and Load Impedance
Input
Matching
Network
Z
Z
source
load
Harmonics
MHz
GHz
1.69
1.72
1.75
845
860
875
f
f
= Test circuit impedance as measured from
= Test circuit impedance as measured
V
DD
gate to gate, balanced configuration.
from drain to drain, balanced configuration.
= 32 V, I
Z
Z
source
source
f = 875 MHz
2.85 + j14.30
3.27 + j14.32
3.35 + j14.36
+
3.99 - j2.50
3.56 - j1.98
3.18 - j1.46
DQ
Z
Z
Z
source
source
o
= 800 mA, P
Device
Under
Test
Ω
Ω
= 10 Ω
f = 845 MHz
f = 875 MHz
f = 845 MHz
out
= 180 W PEP
Z
5.63 + j0.38
5.28 + j0.43
4.94 + j0.56
1.23 + j9.37
1.54 + j9.60
1.73 + j9.62
load
+
Z
Z
Z
load
load
load
Ω
Ω
Output
Matching
Network
MRF372R3 MRF372R5
7

Related parts for MRF372