BLF202 NXP Semiconductors, BLF202 Datasheet - Page 2

• Manufacturer Part Number: BLF202
• Manufacturer: NXP Semiconductors

Specifications of BLF202

• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 1A
• Drain Source Voltage (max): 40V
• Output Power (max): 2W
• Power Gain (typ)@vds: 13@12.5VdB
• Frequency (max): 175MHz
• Package Type: CDIP SMD
• Pin Count: 8
• Forward Transconductance (typ): 0.135S
• Drain Source Resistance (max): 4000@15Vmohm
• Input Capacitance (typ)@vds: 5.3@12.5VpF
• Output Capacitance (typ)@vds: 7.8@12.5VpF
• Reverse Capacitance (typ): 1.8@12.5VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 5700mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor in an 8-lead SOT409A SMD package with a
ceramic cap.
QUICK REFERENCE DATA
RF performance at T
2003 Sep 19
CW, class-B
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
High power gain
Easy power control
Gold metallization
Good thermal stability
Withstands full load mismatch.
Communications transmitters in the HF/VHF range with
a nominal supply voltage of 12.5 V.
HF/VHF power MOS transistor
MODE OF OPERATION
mb
= 25 C in a common source test circuit.
(MHz)
175
f
CAUTION
2
12.5
V
(V)
PINNING - SOT409A
DS
handbook, halfpage
PIN
1, 8
2, 3
4, 5
6, 7
(W)
P
2
L
Fig.1 Simplified outline.
1
Top view
8
source
gate
source
drain
(dB)
G
MBK150
10
DESCRIPTION
p
5
4
Product specification
BLF202
(%)
50
D