BLF202 NXP Semiconductors, BLF202 Datasheet - Page 3

• Manufacturer Part Number: BLF202
• Manufacturer: NXP Semiconductors

Specifications of BLF202

• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 1A
• Drain Source Voltage (max): 40V
• Output Power (max): 2W
• Power Gain (typ)@vds: 13@12.5VdB
• Frequency (max): 175MHz
• Package Type: CDIP SMD
• Pin Count: 8
• Forward Transconductance (typ): 0.135S
• Drain Source Resistance (max): 4000@15Vmohm
• Input Capacitance (typ)@vds: 5.3@12.5VpF
• Output Capacitance (typ)@vds: 7.8@12.5VpF
• Reverse Capacitance (typ): 1.8@12.5VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 5700mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Sep 19
V
V
I
P
T
T
R
handbook, halfpage
D
stg
j
DS
GS
tot
SYMBOL
SYMBOL
th j-mb
HF/VHF power MOS transistor
(1) Current is this area may be limited by R
(2) T
10
10
(A)
I D
10
mb
1
1
2
1
= 85 C.
(1)
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to
mounting base
Fig.2 DC SOAR.
10
PARAMETER
PARAMETER
(2)
V DS (V)
DSon
.
MCD789
10
2
T
T
3
mb
mb
85 C
85 C; P
CONDITIONS
CONDITIONS
tot
= 5.7 W
MIN.
65
VALUE
20.5
Product specification
40
1
5.7
150
200
MAX.
20
BLF202
UNIT
K/W
V
V
A
W
UNIT
C
C