BLF202 NXP Semiconductors, BLF202 Datasheet - Page 4

BLF202

Manufacturer Part Number
BLF202
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF202

Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
1A
Drain Source Voltage (max)
40V
Output Power (max)
2W
Power Gain (typ)@vds
13@12.5VdB
Frequency (max)
175MHz
Package Type
CDIP SMD
Pin Count
8
Forward Transconductance (typ)
0.135S
Drain Source Resistance (max)
4000@15Vmohm
Input Capacitance (typ)@vds
5.3@12.5VpF
Output Capacitance (typ)@vds
7.8@12.5VpF
Reverse Capacitance (typ)
1.8@12.5VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Mode Of Operation
CW Class-B
Number Of Elements
1
Power Dissipation (max)
5700mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / Rohs Status
Compliant

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Philips Semiconductors
CHARACTERISTICS
T
V
2003 Sep 19
V
V
I
I
I
R
g
C
C
C
j
DSS
GSS
DSX
GS
fs
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
HF/VHF power MOS transistor
SYMBOL
group indicator
GROUP
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
on-state drain current
drain-source on-state resistance
forward transconductance
input capacitance
output capacitance
feedback capacitance
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
PARAMETER
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
I
I
V
V
V
I
I
V
V
V
D
D
D
D
GS
GS
GS
GS
GS
GS
= 3 mA; V
= 3 mA; V
= 0.3 A; V
= 0.3 A; V
4
= 0; V
= 20 V; V
= 15 V; V
= 0; V
= 0; V
= 0; V
CONDITIONS
GROUP
DS
DS
DS
DS
GS
DS
GS
DS
W
O
Q
R
U
= 12.5 V
= 12.5 V; f = 1 MHz
= 12.5 V; f = 1 MHz
= 12.5 V; f = 1 MHz
P
S
T
V
X
Y
Z
DS
DS
= 10 V
= 10 V
= 0
= 15 V
= 10 V
= 0
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
40
2
80
MIN.
LIMITS
1.3
3.5
135
5.3
7.8
1.8
(V)
Product specification
TYP. MAX. UNIT
BLF202
4.5
10
1
4
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
V
A
mS
pF
pF
pF
A
A

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