DS1225Y-200 Maxim Integrated Products, DS1225Y-200 Datasheet

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DS1225Y-200

Manufacturer Part Number
DS1225Y-200
Description
NVRAM
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of DS1225Y-200

Data Bus Width
8 bit
Memory Size
64 Kbit
Organization
8 K x 8
Interface Type
Parallel
Access Time
200 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Operating Current
75 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Package / Case
EDIP-28
Mounting Style
Through Hole
Lead Free Status / Rohs Status
No

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19-5603; Rev 10/10
FEATURES
 10 years minimum data retention in the
 Data is automatically protected during power
 Directly replaces 2k x 8 volatile static RAM
 Unlimited write cycles
 Low-power CMOS
 JEDEC standard 28-pin DIP package
 Read and write access times of 150 ns
 Full ±10% operating range
 Optional industrial temperature range of
DESCRIPTION
The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192
words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which
constantly monitors V
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAM can be used in place of existing 8k x 8 SRAMs directly conforming to
the popular bytewide 28-pin DIP standard. The DS1225Y also matches the pinout of the 2764 EPROM or
the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for micro-
processor interfacing.
www.maxim-ic.com
absence of external power
loss
or EEPROM
-40°C to +85°C, designated IND
CC
for an out-of-tolerance condition. When such a condition occurs, the lithium
1 of 8
NOT RECOMMENDED FOR NEW DESIGNS
PIN ASSIGNMENT
PIN DESCRIPTION
A0-A12
DQ0-DQ7
V
GND
CE
WE
OE
CC
24-Pin ENCAPSULATED PACKAGE
GND
DQ0
DQ1
DQ2
A12
A7
A6
A5
A4
A3
A2
A1
A0
NC
64k Nonvolatile SRAM
720-mil EXTENDED
1
2
3
4
5
6
7
8
9
10
11
12
13
14
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DS1225Y

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DS1225Y-200 Summary of contents

Page 1

... The NV SRAM can be used in place of existing SRAMs directly conforming to the popular bytewide 28-pin DIP standard. The DS1225Y also matches the pinout of the 2764 EPROM or the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for micro- processor interfacing ...

Page 2

... OE WRITE MODE The DS1225Y executes a write cycle whenever the WE and CE signals are active (low) after address inputs are stable. The later-occurring falling edge will determine the start of the write cycle. The write cycle is terminated by the earlier rising edge All address inputs must be kept valid throughout the write cycle ...

Page 3

... TYP CCS1 1 3 CCS2 1 CCO1 I CCO1 V 4. DS1225Y -0.3V to +6.0V 0°C to +70°C -40°C to +85°C -40°C to +85°C +260° See Note 10) A MAX UNITS NOTES 5.5 V VCC V +0 ± 10%) CC MAX UNITS NOTES µA +1.0 µA +1.0 ...

Page 4

... SYMBOL Input Capacitance Input/Output Capacitance (T : See Note 10 DS1225Y-150 SYMBOL MIN t 150 RC t ACC COE 150 WC t 100 WR1 t 10 WR2 t ODW t 5 OEW DH1 t 10 DH2 MIN TYP I DS1225Y =5.0V ± 10%) CC MAX UNITS NOTES ns 150 150 +25°C) A MAX UNITS NOTES ...

Page 5

... NOT RECOMMENDED FOR NEW DESIGNS READ CYCLE SEE NOTE 1 WRITE CYCLE 1 SEE NOTE AND 12 WRITE CYCLE 2 SEE NOTE AND DS1225Y ...

Page 6

... SYMBOL MIN 100 REC SYMBOL MIN during a write cycle, the output buffers remain in a high impedance IH is measured from the latter MAX UNITS NOTES µs 11 µs µ +25°C) A MAX UNITS NOTES years DS1225Y 9 ...

Page 7

... low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high-impedance state during this period. 9. Each DS1225Y is marked with a 4-digit date code AABB. AA designates the year of manufacture. BB designates the week of manufacture. The expected t manufacture. ...

Page 8

... Added Not Recommended for New Designs status; updated the storage information, soldering temperature, and lead temperature information in the Absolute Maximum Ratings section; removed the 10/10 -170 and -200 MIN/MAX information from the AC Electrical Characteristics table; added the updated the Ordering Information table DESCRIPTION DS1225Y PAGES CHANGED ...

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