SI4420DY-T1 Vishay, SI4420DY-T1 Datasheet

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SI4420DY-T1

Manufacturer Part Number
SI4420DY-T1
Description
MOSFET Small Signal 30V 12.5A 2.5W
Manufacturer
Vishay
Datasheet

Specifications of SI4420DY-T1

Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.013 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.5 A
Power Dissipation
1.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No

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Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71818
S-31990—Rev. F, 13-Oct-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on FR4 Board, t v 10 sec.
i
DS
30
30
(V)
J
Ordering Information: Si4420DY
ti
t A bi
G
S
S
S
1
2
3
4
J
J
a
a
0.013 @ V
0.009 @ V
= 150_C)
= 150_C)
t
a
a
r
DS(on)
Si4420DY-T1 (with Tape and Reel)
Top View
Parameter
Parameter
SO-8
a
a
GS
GS
(W)
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 10 V
a
8
7
6
5
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
I
Steady State
Steady State
D
t t 10 sec
T
T
T
T
13.5
11
A
A
A
A
(A)
= 25_C
= 70_C
= 25_C
= 70_C
Symbol
Symbol
G
T
R
R
R
J
V
V
I
P
P
, T
DM
I
I
I
thJA
thJF
GS
DS
D
D
S
N-Channel MOSFET
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D 100% R
D
S
Typical
10 sec
g
13.5
10.8
Tested
2.7
3.0
1.9
33
70
16
−55 to 150
"20
30
50
Vishay Siliconix
Steady State
Maximum
1.36
0.95
9.5
7.5
1.5
42
84
21
Si4420DY
www.vishay.com
Unit
Unit
_C/W
_C
W
W
V
V
A
A
1

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SI4420DY-T1 Summary of contents

Page 1

... 0.013 @ Top View Ordering Information: Si4420DY Si4420DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Maximum Power Dissipation ...

Page 2

... Si4420DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... V − Source-to-Drain Voltage (V) SD Document Number: 71818 S-31990—Rev. F, 13-Oct-03 5000 4000 3000 2000 1000 25_C J 0.8 1.0 1.2 Si4420DY Vishay Siliconix Capacitance C iss C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 13 1.4 1.2 1 ...

Page 4

... Si4420DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D −0.0 −0.2 −0.4 −0.6 −0.8 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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