LM4834MS National Semiconductor, LM4834MS Datasheet - Page 5

• Manufacturer Part Number: LM4834MS
• Description: IC, AUDIO PWR AMP CLASS AB 1.75W SSOP-28
• Manufacturer: National Semiconductor

Specifications of LM4834MS

• Amplifier Class: AB
• No. Of Channels: 1
• Output Power: 1.75W
• Supply Voltage Range: 4.5V to 5.5V
• Load Impedance: 8ohm
• Operating Temperature Range: -40°C to +85°C
• Amplifier Case Style: SSOP
• Rohs Compliant: No

External Components Description
Typical Performance Characteristics
Components.
1.
2.
3.
4.
5.
6.
7.
8.
9.
R
R
R
C
C
C
R
R
C
LFE
M1
M2
O
S
B
S
F
i
THD+N vs Frequency
Bridged Power Amp
Input coupling capacitor which blocks the DC voltage at the amplifier’s input terminals. Also creates a high
pass filter with R
an explanation of how to determine the value of C
Supply bypass capacitor which provides power supply filtering. Refer to the Power Supply Bypassing
section for information concerning proper placement and selection of the supply bypass capacitor.
Bypass pin capacitor which provides half-supply filtering. Refer to the section, Proper Selection of
External Components, for information concerning proper placement and selection of C
Output coupling capacitor which blocks the DC voltage at the amplifiers output. Forms a high pass filter
with R
Summing resistor that combines the right and left line level outputs into the mono input of the bridged
amplifier. The two summing resistors in parallel determine the value of the input resistance of the bridged
amplifier.
Resistor for the bridged power amplifier in series with R
C
Feedback resistor which sets the closed-loop gain in conjunction with the equivalent R
power amplifier.
Resistor in series with Microphone supply pin and the microphone for biasing differential input
microphones.
Resistor in series with reference ground and the microphone used for biasing differential input
microphones.
LFE
to increase closed-loop gain at low frequencies.
L
at f
o
= 1/(2πR
i
at f
c
L
= 1/(2πR
C
O
10001505
).
i
C
i
). Refer to the section, Proper Selection of External Components, for
Figure 2
Functional Description
5
i
.
F
at high frequencies. Used in conjunction with
THD+N vs Frequency
Bridged Power Amp
S
B
for the bridged
.
10001504
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