IRLR024N International Rectifier, IRLR024N Datasheet

N CHANNEL MOSFET, 55V, 17A, D-PAK

IRLR024N

Manufacturer Part Number
IRLR024N
Description
N CHANNEL MOSFET, 55V, 17A, D-PAK
Manufacturer
International Rectifier
Datasheet

Specifications of IRLR024N

Transistor Polarity
N Channel
Continuous Drain Current Id
17A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
65mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Rohs Compliant
No

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Description
Fifth Generation HEXFET
utilize advanced processing techniques to achieve the lowest possible on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient device for use in
a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Thermal Resistance
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
www.irf.com
R
R
R
I
I
I
P
V
E
I
E
dv/dt
T
T
D
D
DM
AR
STG
D
GS
AR
J
AS
For recommended footprint and soldering techniques refer to application note #AN-994
@ T
@ T
JC
JA
JA
Logic-Level Gate Drive
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 100°C
= 25°C
= 25°C
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
®
Power MOSFETs from International Rectifier
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
–––
HEXFET
S
D
-55 to + 175
Max.
± 16
0.3
4.5
5.0
17
12
72
45
68
11
D-Pak
IRLR024N IRLU024N
®
R
Power MOSFET
DS(on)
Max.
V
110
3.3
50
DSS
I
D
IRLR024N
IRLU024N
= 17A
PD- 91363E
= 0.065
= 55V
I-Pak
Units
Units
°C/W
W/°C
V/ns
mJ
mJ
°C
W
A
A
V
1
2/10/00

Related parts for IRLR024N

IRLR024N Summary of contents

Page 1

... Logic-Level Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description ® Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on- resistance per silicon area. This benefit, combined with the fast switching ...

Page 2

IRLR/U024N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2. 2.5 V 20µ 5°C J 0.1 0 ...

Page 4

IRLR/U024N ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature ...

Page 6

IRLR/U024N Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...

Page 7

D.U Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel www.irf.com Peak Diode ...

Page 8

IRLR/U024N D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (.2 0 ...

Page 9

I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (. ...

Page 10

IRLR/U024N D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches ...

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