H5PS1G83EFR-S6C HYNIX SEMICONDUCTOR, H5PS1G83EFR-S6C Datasheet - Page 14

• Manufacturer Part Number: H5PS1G83EFR-S6C
• Description: 58T1895
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5PS1G83EFR-S6C

• Memory Type: SDRAM
• Memory Configuration: 128M X 8
• Access Time: 15ns
• Memory Case Style: FBGA
• No. Of Pins: 60
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 1 Gbit
• Rohs Compliant: Yes

Rev. 0.4 / Nov 2008
3.3 Output Buffer Characteristics
3.3.1 Output AC Test Conditions
Note:
3.3.2 Output DC Current Drive
Note:
1. The VDDQ of the device under test is referenced.
1. V
2. V
3. The dc value of V
4.
Symbol
Symbol
I
I
V
OH(dc)
OL(dc)
and V
The values of I
device drive current capability to ensure V
delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating
point (see Section 3.3) along a 21 ohm load line to define a convenient driver current for measurement.
OTR
DDQ
DDQ
DDQ
= 1.7 V; V
= 1.7 V; V
Output Timing Measurement Reference Level
Output Minimum Source DC Current
Output Minimum Sink DC Current
- 280 mV.
OH(dc)
OUT
OUT
REF
= 1420 mV. (V
= 280 mV. V
applied to the receiving device is set to V
and I
OL(dc)
Parameter
Parameter
are based on the conditions given in Notes 1 and 2. They are used to test
OUT
OUT
/I
OL
- V
must be less than 21 ohm for values of V
IH
DDQ
min plus a noise margin and V
)/I
OH
must be less than 21 ohm for values of V
TT
SSTL_18 Class II
0.5 * V
SSTl_18
- 13.4
13.4
IL
DDQ
max minus a noise margin are
OUT
between 0 V and 280 mV.
Units
H5PS1G43EFR
H5PS1G83EFR
H5PS1G63EFR
Units
OUT
mA
mA
V
between V
Notes
Notes
1, 3, 4
2, 3, 4
1
DDQ
14