H5PS1G83EFR-S6C HYNIX SEMICONDUCTOR, H5PS1G83EFR-S6C Datasheet - Page 19

• Manufacturer Part Number: H5PS1G83EFR-S6C
• Description: 58T1895
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5PS1G83EFR-S6C

• Memory Type: SDRAM
• Memory Configuration: 128M X 8
• Access Time: 15ns
• Memory Case Style: FBGA
• No. Of Pins: 60
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 1 Gbit
• Rohs Compliant: Yes

Rev. 0.4 / Nov 2008
IDD Testing Parameters
For purposes of IDD testing, the following parameters are to be utilized.
Detailed IDD7
The detailed timings are shown below for IDD7. Changes will be required if timing parameter changes are made to the
specification.
Legend: A = Active; RA = Read with Autoprecharge; D = Deselect
IDD7: Operating Current: All Bank Interleave Read operation
All banks are being interleaved at minimum t RC(IDD) without violating t RRD(IDD) and tFAW (IDD) using a burst length
of 4. Control and address bus inputs are STABLE during DESELECTs. IOUT = 0mA
Timing Patterns for 4 bank devices x4/ x8/ x16
-DDR2-400 4/4/4: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D D D
-DDR2-400 3/3/3: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D D
-DDR2-533 4/4/4: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D
-DDR2-533 4/4/4: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D
-DDR2-667 5/5/5: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D
-DDR2-667 4/4/4: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D
-DDR2-800 6/6/6: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D D
-DDR2-800 5/5/5: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D
-DDR2-800 4/4/4: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D
Timing Patterns for 8 bank devices x4/8
-DDR2-400 all bins: A0 RA0 A1 RA1 A2 RA2 A3 RA3 A4 RA4 A5 RA5 A6 RA6 A7 RA7
-DDR2-533 all bins: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D
-DDR2-667 all bins: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D
-DDR2-800 all bins: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D
t RFC(IDD)-256Mb
t RFC(IDD)-512Mb
t RRD(IDD)-x4/x8
t RRD(IDD)-x16
t RFC(IDD)-1Gb
t RFC(IDD)-2Gb
t RASmax(IDD)
t RASmin(IDD)
Parameter
t RCD(IDD)
t RC(IDD)
t CK(IDD)
t RP(IDD)
CL(IDD)
5-5-5
70000
127.5
197.5
12.5
57.5
12.5
105
2.5
7.5
10
45
75
5
DDR2-800
6-6-6
70000
127.5
197.5
105
7.5
2.5
15
60
10
45
15
75
6
DDR2-
5-5-5
70000
127.5
197.5
667
105
7.5
15
60
10
45
15
75
5
3
DDR2-
4-4-4
70000
127.5
197.5
533
3.75
105
7.5
15
60
10
45
15
75
4
DDR2-
3-3-3
70000
127.5
197.5
400
105
7.5
15
55
10
40
15
75
3
5
H5PS1G43EFR
H5PS1G83EFR
H5PS1G63EFR
Units
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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