H5PS1G83EFR-S6C HYNIX SEMICONDUCTOR, H5PS1G83EFR-S6C Datasheet - Page 31

58T1895

H5PS1G83EFR-S6C

Manufacturer Part Number
H5PS1G83EFR-S6C
Description
58T1895
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of H5PS1G83EFR-S6C

Memory Type
SDRAM
Memory Configuration
128M X 8
Access Time
15ns
Memory Case Style
FBGA
No. Of Pins
60
Operating Temperature Range
0°C To +85°C
Memory Size
1 Gbit
Rohs Compliant
Yes

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Rev. 0.4 / Nov 2008
Fig. b. Illustration of tangent line for tIS,tDS
Setup Slew Rate
Falling Signal
V
V
V
V
IL
IH
IH
IL
CK, DQS
CK, DQS
V
(dc)max
(dc)min
(ac)min
(ac)max
REF
V
(dc)
Vss
DDQ
Nomial
line
=
Delta TF
Tangent line[V
Tangent
line
t
t
Delta TF
IS
DS
,
REF
Setup Slew Rate
Rising Signal
(dc)-V
t
t
IH
DH
,
IL
(ac)max]
nominal
line
Delta TR
=
Tangent line[V
t
t
tangent
IS
DS
,
line
t
t
V
region
Delta TR
IH
DH
REF
IH
,
(ac)min-V
to ac
H5PS1G43EFR
H5PS1G83EFR
H5PS1G63EFR
REF
(dc)]
31

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