CY7C4292V-15ASC Cypress Semiconductor Corp, CY7C4292V-15ASC Datasheet

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CY7C4292V-15ASC

Manufacturer Part Number
CY7C4292V-15ASC
Description
FIFO Mem Sync Dual Depth/Width Uni-Dir 128K x 9 64-Pin TQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C4292V-15ASC

Package
64TQFP
Configuration
Dual
Bus Directional
Uni-Directional
Density
1.125 Mb
Organization
128Kx9
Data Bus Width
9 Bit
Timing Type
Synchronous
Expansion Type
Depth|Width
Typical Operating Supply Voltage
3.3 V
Operating Temperature
0 to 70 °C
Features
Cypress Semiconductor Corporation
• 3.3V operation for low power consumption and easy
• High-speed, low-power, first-in first-out (FIFO)
• 64K x 9 (CY7C4282V)
• 128K x 9 (CY7C4292V)
• 0.35 micron CMOS for optimum speed/power
• High-speed, Near Zero Latency (True Dual-Ported
• Low power
• Fully asynchronous and simultaneous read and write
• Empty, Full, and Programmable Almost Empty and Al-
• Retransmit function
• Output Enable (OE) pin
• Independent read and write enable pins
• Supports free-running 50% duty cycle clock inputs
• Width Expansion Capability
• Depth Expansion Capability through token-passing
• 64-pin 10x10 STQFP
• Pin-compatible 3.3V solution for CY7C4282/92
Logic Block Diagram
integration into low-voltage systems
memories
Memory Cell), 100-MHz operation (10 ns read/write
cycle times)
operation
most Full status flags
scheme (no external logic required)
— I
— I
CC
SB
= 6 mA
= 25 mA
PAF/XO
FL/RT
XI/LD
RS
WCLK
EXPANSION
CONTROL
POINTER
LOGIC
RESET
WRITE
WRITE
LOGIC
WEN
64K/128Kx9 Low Voltage Deep Sync FIFOs
3901 North First Street
OUTPUT REGISTER
THREE-STATE
RAM Array
REGISTER
128K x 9
Dual Port
64K x 9
Q
D
INPUT
0
0
8
8
w/ Retransmit & Depth Expansion
Functional Description
The CY7C4282V/92V are high-speed, low-power, first-in first-
out (FIFO) memories with clocked read and write interfaces.
All devices are 9 bits wide. The CY7C4282V/92V can be cas-
caded to increase FIFO depth. Programmable features include
Almost Full/Almost Empty flags. These FIFOs provide solutions
for a wide variety of data buffering needs, including high-speed data
acquisition, multiprocessor interfaces, video and communications
buffering.
These FIFOs have 9-bit input and output ports that are con-
trolled by separate clock and enable signals. The input port is
controlled by a free-running clock (WCLK) and a Write Enable
pin (WEN).
Retransmit and Synchronous Almost Full/Almost Empty flag
features are available on these devices.
Depth expansion is possible using the Cascade Input (XI), Cas-
cade Output (XO), and First Load (FL) pins. The XO pin is connected
to the XI pin of the next device, and the XO pin of the last device
should be connected to the XI pin of the first device. The FL pin of the
first device is tied to V
should be tied to V
When WEN is asserted, data is written into the FIFO on the
rising edge of the WCLK signal. While WEN is held active, data
is continually written into the FIFO on each cycle. The output
port is controlled in a similar manner by a free-running Read
Clock (RCLK) and a Read Enable pin (REN). In addition, the
CY7C4282V/92V have an Output Enable pin (OE). The read
and write clocks may be tied together for single-clock operation
or the two clocks may be run independently for asynchronous
read/write applications. Clock frequencies up to 67 MHz are
achievable.
OE
RCLK
PROGRAM
REGISTER
CONTROL
POINTER
FLAG
LOGIC
READ
FLAG
READ
San Jose
REN
CC
SS
FF
EF
PAE
PAF/XO
and the FL pin of all the remaining devices
4282V–1
CA 95134
CY7C4282V
CY7C4292V
October 18, 1999
408-943-2600

Related parts for CY7C4292V-15ASC

CY7C4292V-15ASC Summary of contents

Page 1

... High-speed, low-power, first-in first-out (FIFO) memories • 64K x 9 (CY7C4282V) • 128K x 9 (CY7C4292V) • 0.35 micron CMOS for optimum speed/power • High-speed, Near Zero Latency (True Dual-Ported Memory Cell), 100-MHz operation (10 ns read/write cycle times) • ...

Page 2

... CMOS technology. Input ESD protection is greater than 2001V, and latch-up is prevented by the use of guard rings. 7C4282V/92V-10 7C4282V/92V-15 100 CY7C4282V 64k x 9 64-pin 10x10 TQFP 2 CY7C4282V CY7C4292V GND GND N GND FL/RT N/C 4282V–2 7C4282V/92V-25 66 CY7C4292V 128k x 9 64-pin 10x10 TQFP ...

Page 3

... MIL-STD-883, Method 3015) Latch-Up Current ..................................................... >200 +150 C Operating Range +125 C Range 0. +0.5V CC Commercial [1] Industrial 0. +0.5V CC Notes: 0. +0. the “instant on” case temperature Range for commercial - 3.3V ± 150 mV CY7C4282V CY7C4292V ; all other devices SS SS Ambient [2] Temperature +70 C 3.3V / 300mV +85 C 3.3V / 300mV ...

Page 4

... Com’l Ind Com’l Ind Test Conditions MHz 3.3V CC [6, 7] 3.0V R2=510 GND 3 ns 4282V–4 2.0V /2 3.0V GND CY7C4282V CY7C4292V 7C4282V/92V 7C4282V/92V -15 -25 Min. Max. Min. Max. 2.4 2.4 0.4 0.4 0.4 2 0.8 0.5 0.8 0.5 0.8 ...

Page 5

... Almost-Empty Flag and Almost-Full Flag Notes: 8. Pulse widths less than minimum values are not allowed. 9. Values guaranteed by design, not currently tested. 7C4282V/92V 7C4282V/92V -10 Min. Max. Min. 100 4.5 6 4 CY7C4282V CY7C4292V 7C4282V/92V -15 -25 Max. Min. Max. Unit 66.7 40 MHz ...

Page 6

... REF t A VALID DATA t OE [11] t SKEW1 , then FF may not change state until the next WCLK rising edge. SKEW1 , then EF may not change state until the next RCLK rising edge. SKEW2 6 CY7C4282V CY7C4292V NO OPERATION t WFF 4282V–6 t REF t OHZ 4282V–7 ...

Page 7

... The first word is available the cycle after EF goes HIGH, always. t RSS RSR t RSF t RSF t RSF D 1 [15] t FRL t REF t OLZ When t < minimum specification, t CLK SKEW2 SKEW1 7 CY7C4282V CY7C4292V [14] OE=1 OE [16 (maximum) = either 2 FRL CLK SKEW1 CLK 4282V– 4282V– SKEW1 ...

Page 8

... REN LOW –Q DATA IN OUTPUT REGISTER REF REF DATA WRITE t WFF ENH A DATA READ 8 CY7C4282V CY7C4292V DATA WRITE 2 t ENH ENS [15] t FRL t t REF SKEW2 DATA READ 4282V–10 NO WRITE [10] DATA WRITE t SKEW1 t WFF t ENH t ENS t A NEXT DATA READ ...

Page 9

... Note t CLKL t t ENS ENH t PAF t ENS (m 1) words of the FIFO when PAF goes LOW. , then PAF may not change state until the next WCLK. 9 CY7C4282V CY7C4292V WORDS 19 Note IN FIFO t PAE t t ENS ENH 4282V–12 FULL M WORDS [21] IN FIFO [22] ...

Page 10

... PAE OFFSET PAF OFFSET LSB MSB t CLKL t ENH t A UNKNOWN PAE OFFSET LSB t PRT to update these flags. RTR 10 CY7C4282V CY7C4292V PAF OFFSET LSB MSB 4282V–14 PAF OFFSET MSB PAF OFFSET PAE OFFSET MSB LSB 4282V–15 t RTR 4282V–16 . RTR ...

Page 11

... LD WEN Note: 26. The same selection sequence applies to reading from the registers. REN is enabled and a read is performed on the LOW-to-HIGH transition of RCLK. 11 CY7C4282V CY7C4292V 128kx Empty Offset (LSB) Reg. Default Value = 007h 0 8 (MSB) (MSB) Default Value = 000h Default Value = 000h Full Offset (LSB) Reg ...

Page 12

... PAF. PAF is synchronized to the LOW-to-HIGH transition of WCLK by one flip-flop and is set LOW when the number of unread words in the FIFO is greater than or equal to CY7C4282V (64K CY7C4292V (128K m). PAF is set HIGH by the LOW-to- HIGH transition of WCLK when the number of available mem- ory locations is greater than m. ...

Page 13

... LOW at Reset so that the pin operates as a control to load and read the programmable flag offsets. RESET (RS) 9 7C4282V 7C4292V FIRST LOAD (FL) EXPANSION IN (XI) Configuration 13 CY7C4282V CY7C4292V READ CLOCK (RCLK) READ ENABLE (REN) OUTPUT ENABLE (OE) PROGRAMMABLE (PAF) EMPTY FLAG (EF) DATA OUT ( 4282V–17 ...

Page 14

... EF and FF composite flags are created by ORing together each individual respective flag. XO RCLK WCLK REN WEN OE RS 7C4282V 7C4292V RCLK WCLK REN WEN OE RS 7C4282V D 7C4292V READ CLOCK (RCLK) XO WCLK RCLK READ ENABLE (REN) WEN REN OUTPUTENABLE (OE) RS 7C4282V OE 7C4292V CY7C4282V CY7C4292V DATA OUT (Q) EF 4282V–25 ...

Page 15

... Low Voltage Deep Sync FIFO Speed (ns) Ordering Code 10 CY7C4292V-10ASC 15 CY7C4292V-15ASC CY7C4292V-15ASI 25 CY7C4292V-25ASC Document #: 38-00657-B Package Diagram 64-Pin Thin Plastic Quad Flat Pack ( 1.4 mm) A64 © Cypress Semiconductor Corporation, 1999. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product ...

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